Magnetic properties and a change of the electrical resistivity under pressure in CePtGe2

Shingo Kirita, Arumugam Thamizhavel, Tetsuya Takeuchi, Kanehito Tabata, Tatsuo C. Kobayashi, Andrei Galatanu, Etsuji Yamamoto, Rikio Settai, Srinivasan Ramakrishnan, Yoshichika Onuki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have succeeded in growing a single crystal of CePtGe2 with the orthorhombic crystal structure by the Bi-flux method. In order to investigate the anisotropic properties, the magnetic susceptibility, magnetization and electrical resistivity measurements have been performed along the principal axes. From these measurements, it is found that CePtGe2 orders ferromagnetically below TC = 5.1 K, and the magnetic easy-axis corresponds to the a-axis. The anisotropic properties have been analyzed on the basis of the crystalline electric field model. We have also studied the pressure effect on the ferromagnetic ordering, and TC is found to increase with increasing pressure. However, TC smears out around 3.5 GPa and a new phase appears at higher pressures, where the transition temperature of the new phase also increases with increasing pressure.

Original languageEnglish
Pages (from-to)2338-2343
Number of pages6
Journaljournal of the physical society of japan
Volume72
Issue number9
DOIs
Publication statusPublished - Sep 2003
Externally publishedYes

Keywords

  • CePtGe
  • High-pressure
  • Magnetization
  • Resistivity
  • Single crystal

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Magnetic properties and a change of the electrical resistivity under pressure in CePtGe<sub>2</sub>'. Together they form a unique fingerprint.

Cite this