Magnesium diffusion in wurtzite-type GaN crystal

K. Harafuji, T. Tsuchiya, K. Kawamura

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

The behaviors of Ga and N vacancies (Schottky defects, Frenkel defects), lattice-site and interstitial Mg atoms, and interstitial H atoms have been studied in the wurtzite-type GaN crystal by molecular dynamic simulation. The diffusivity of interstitial Mg atoms on the (0001) plane is predominant compared with the diffusivity along the [0001] direction. Diffusion coefficients of interstitial Mg atoms are composed of two Arrhenius formula for temperatures from 850 K to 2000 K. The one reflects the high-possibility occurrence of jumping movements among cage centers of hexagonal crystal structure for higher temperature. The other reflects the thermal vibration at the cage center for lower temperature.

Original languageEnglish
Pages (from-to)2240-2243
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - Dec 1 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

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ASJC Scopus subject areas

  • Condensed Matter Physics

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