Magnesium diffusion in wurtzite-type GaN crystal

K. Harafuji, T. Tsuchiya, K. Kawamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The behaviors of Ga and N vacancies (Schottky defects, Frenkel defects), lattice-site and interstitial Mg atoms, and interstitial H atoms have been studied in the wurtzite-type GaN crystal by molecular dynamic simulation. The diffusivity of interstitial Mg atoms on the (0001) plane is predominant compared with the diffusivity along the [0001] direction. Diffusion coefficients of interstitial Mg atoms are composed of two Arrhenius formula for temperatures from 850 K to 2000 K. The one reflects the high-possibility occurrence of jumping movements among cage centers of hexagonal crystal structure for higher temperature. The other reflects the thermal vibration at the cage center for lower temperature.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2240-2243
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period5/25/035/30/03

Fingerprint

wurtzite
Magnesium
magnesium
interstitials
Atoms
Crystals
crystals
diffusivity
atoms
Frenkel defects
Crystal defects
Temperature
Vacancies
Molecular dynamics
diffusion coefficient
Crystal structure
occurrences
molecular dynamics
vibration
Defects

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Harafuji, K., Tsuchiya, T., & Kawamura, K. (2003). Magnesium diffusion in wurtzite-type GaN crystal. In Physica Status Solidi C: Conferences (7 ed., pp. 2240-2243) https://doi.org/10.1002/pssc.200303298

Magnesium diffusion in wurtzite-type GaN crystal. / Harafuji, K.; Tsuchiya, T.; Kawamura, K.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2240-2243.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harafuji, K, Tsuchiya, T & Kawamura, K 2003, Magnesium diffusion in wurtzite-type GaN crystal. in Physica Status Solidi C: Conferences. 7 edn, pp. 2240-2243, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 5/25/03. https://doi.org/10.1002/pssc.200303298
Harafuji K, Tsuchiya T, Kawamura K. Magnesium diffusion in wurtzite-type GaN crystal. In Physica Status Solidi C: Conferences. 7 ed. 2003. p. 2240-2243 https://doi.org/10.1002/pssc.200303298
Harafuji, K. ; Tsuchiya, T. ; Kawamura, K. / Magnesium diffusion in wurtzite-type GaN crystal. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2240-2243
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