The behaviors of Ga and N vacancies (Schottky defects, Frenkel defects), lattice-site and interstitial Mg atoms, and interstitial H atoms have been studied in the wurtzite-type GaN crystal by molecular dynamic simulation. The diffusivity of interstitial Mg atoms on the (0001) plane is predominant compared with the diffusivity along the  direction. Diffusion coefficients of interstitial Mg atoms are composed of two Arrhenius formula for temperatures from 850 K to 2000 K. The one reflects the high-possibility occurrence of jumping movements among cage centers of hexagonal crystal structure for higher temperature. The other reflects the thermal vibration at the cage center for lower temperature.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: May 25 2003 → May 30 2003
ASJC Scopus subject areas
- Condensed Matter Physics