Abstract
Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
| Original language | English |
|---|---|
| Pages (from-to) | 286-291 |
| Number of pages | 6 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 73 |
| DOIs | |
| Publication status | Published - Oct 1 2019 |
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Keywords
- Alkyl phosphonic acid
- Low-voltage transistor
- Organic thin-film transistor
- Phenacene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Low-voltage organic thin-film transistors based on [n]phenacenes. / Al Ruzaiqi, Afra; Okamoto, Hideki; Kubozono, Yoshihiro; Zschieschang, Ute; Klauk, Hagen; Baran, Peter; Gleskova, Helena.
In: Organic Electronics: physics, materials, applications, Vol. 73, 01.10.2019, p. 286-291.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-voltage organic thin-film transistors based on [n]phenacenes
AU - Al Ruzaiqi, Afra
AU - Okamoto, Hideki
AU - Kubozono, Yoshihiro
AU - Zschieschang, Ute
AU - Klauk, Hagen
AU - Baran, Peter
AU - Gleskova, Helena
PY - 2019/10/1
Y1 - 2019/10/1
N2 - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
AB - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
KW - Alkyl phosphonic acid
KW - Low-voltage transistor
KW - Organic thin-film transistor
KW - Phenacene
UR - http://www.scopus.com/inward/record.url?scp=85067627079&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067627079&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2019.06.021
DO - 10.1016/j.orgel.2019.06.021
M3 - Article
AN - SCOPUS:85067627079
VL - 73
SP - 286
EP - 291
JO - Organic Electronics
JF - Organic Electronics
SN - 1566-1199
ER -