Low-voltage organic thin-film transistors based on [n]phenacenes

Afra Al Ruzaiqi; Hideki Okamoto; Yoshihiro Kubozono; Ute Zschieschang; Hagen Klauk; Peter Baran; Helena Gleskova

doi:10.1016/j.orgel.2019.06.021

Low-voltage organic thin-film transistors based on [n]phenacenes

Afra Al Ruzaiqi, Hideki Okamoto, Yoshihiro Kubozono, Ute Zschieschang, Hagen Klauk, Peter Baran, Helena Gleskova

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm²/V⋅s for transistors on glass and 0.092 cm²/V⋅s for transistors on flexible PEN.

Original language	English
Pages (from-to)	286-291
Number of pages	6
Journal	Organic Electronics: physics, materials, applications
Volume	73
DOIs	https://doi.org/10.1016/j.orgel.2019.06.021
Publication status	Published - Oct 1 2019

Keywords

Alkyl phosphonic acid
Low-voltage transistor
Organic thin-film transistor
Phenacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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Al Ruzaiqi, A., Okamoto, H., Kubozono, Y., Zschieschang, U., Klauk, H., Baran, P., & Gleskova, H. (2019). Low-voltage organic thin-film transistors based on [n]phenacenes. Organic Electronics: physics, materials, applications, 73, 286-291. https://doi.org/10.1016/j.orgel.2019.06.021

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title = "Low-voltage organic thin-film transistors based on [n]phenacenes",

abstract = "Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.",

keywords = "Alkyl phosphonic acid, Low-voltage transistor, Organic thin-film transistor, Phenacene",

author = "{Al Ruzaiqi}, Afra and Hideki Okamoto and Yoshihiro Kubozono and Ute Zschieschang and Hagen Klauk and Peter Baran and Helena Gleskova",

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AU - Al Ruzaiqi, Afra

AU - Okamoto, Hideki

AU - Kubozono, Yoshihiro

AU - Zschieschang, Ute

AU - Klauk, Hagen

AU - Baran, Peter

AU - Gleskova, Helena

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.

AB - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.

KW - Alkyl phosphonic acid

KW - Low-voltage transistor

KW - Organic thin-film transistor

KW - Phenacene

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