TY - JOUR
T1 - Low-voltage organic thin-film transistors based on [n]phenacenes
AU - Al Ruzaiqi, Afra
AU - Okamoto, Hideki
AU - Kubozono, Yoshihiro
AU - Zschieschang, Ute
AU - Klauk, Hagen
AU - Baran, Peter
AU - Gleskova, Helena
N1 - Funding Information:
This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 734331 . Image 2 It was also partly supported by Grants-in-Aid (26105004 and 18K18736) from MEXT, Japan.
Publisher Copyright:
© 2019
PY - 2019/10
Y1 - 2019/10
N2 - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
AB - Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
KW - Alkyl phosphonic acid
KW - Low-voltage transistor
KW - Organic thin-film transistor
KW - Phenacene
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U2 - 10.1016/j.orgel.2019.06.021
DO - 10.1016/j.orgel.2019.06.021
M3 - Article
AN - SCOPUS:85067627079
VL - 73
SP - 286
EP - 291
JO - Organic Electronics
JF - Organic Electronics
SN - 1566-1199
ER -