Low-voltage organic thin-film transistors based on [n]phenacenes

Afra Al Ruzaiqi, Hideki Okamoto, Yoshihiro Kubozono, Ute Zschieschang, Hagen Klauk, Peter Baran, Helena Gleskova

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.

Original languageEnglish
Pages (from-to)286-291
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume73
DOIs
Publication statusPublished - Oct 1 2019

Keywords

  • Alkyl phosphonic acid
  • Low-voltage transistor
  • Organic thin-film transistor
  • Phenacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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