Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Yumiko Kaji, Naoko Kawasaki, Xuesong Lee, Hideki Okamoto, Yasuyuki Sugawara, Shohei Oikawa, Akio Ito, Hiroyuki Okazaki, Takayoshi Yokoya, Akihiko Fujiwara, Yoshihiro Kubozono

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop and polystyrene. The picene FETs operated in low absolute gate voltage VG below 15 V for Cytop coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2 /picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.

Original languageEnglish
Article number183302
JournalApplied Physics Letters
Volume95
Issue number18
DOIs
Publication statusPublished - Nov 16 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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