Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application

Mitsuru Imaizumi, Mitsuhiro Adachi, Yasunori Fujii, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Preliminary results of growth of gallium arsenide poly-crystalline films on quartz glass substrate are reported. The films were grown using chemical beam epitaxy apparatus at substrate temperatures varied between 400 °C and 500 °C. The growth of polycrystalline GaAs has been realized at temperatures above 450 °C. X-ray diffraction (XRD) and Raman scattering show that the film grown at 500 °C has good crystallinity. Also, XRD and atomic force microscopy (AFM) have confirmed preferential columnar growth toward the 〈1 1 1〉 direction. Furthermore, AFM image reveals a naturally textured surface with a grain size of 0.5-1.0 μm. Optical energy gap, deduced from absorption coefficient of the film, is about 1.4 eV. Hall measurement indicates electrical properties such as resistivity, carrier concentration, and carrier mobility of approximately 103 Ω cm, approximately 1015 cm-3, and less than a few cm2/Vs, respectively. The results reveal future prospects of the film for application in space solar cells.

Original languageEnglish
Pages (from-to)688-692
Number of pages5
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - Dec 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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