TY - GEN
T1 - Low-temperature growth of C-axis oriented Y-type hexagonal ferrite's films by polymerized complex method
AU - Fujii, Tatsuo
AU - Komatsu, Koutarou
AU - Nakanishi, Makoto
AU - Takada, Jun
PY - 2001
Y1 - 2001
N2 - Well-crystallized Y-type hexagonal ferrite (Me2-Y, Me=Zn and Co) films with highly c-axis orientation were successfully prepared on Ag substrates by dip coating technique. The procedure consisted of preparation of homogeneous metal-organic solution by polymerized complex method, dip coating and subsequent heat-treatment. The films deposited on α-Al 2O3 easily reacted with the substrate, while the films deposited on Ag formed hexagonal planar structures. The formation temperature of Me2-Y structures on Ag was 800 °C, which was much lower than that of Me2-Y bulk crystals. The Me2-Y films on Ag had a large in-plane magnetic anisotropy. The observed anisotropy field of the Zn 2-Y film was about 13 kOe and that of Co2-Y was too large beyond our experimental limits.
AB - Well-crystallized Y-type hexagonal ferrite (Me2-Y, Me=Zn and Co) films with highly c-axis orientation were successfully prepared on Ag substrates by dip coating technique. The procedure consisted of preparation of homogeneous metal-organic solution by polymerized complex method, dip coating and subsequent heat-treatment. The films deposited on α-Al 2O3 easily reacted with the substrate, while the films deposited on Ag formed hexagonal planar structures. The formation temperature of Me2-Y structures on Ag was 800 °C, which was much lower than that of Me2-Y bulk crystals. The Me2-Y films on Ag had a large in-plane magnetic anisotropy. The observed anisotropy field of the Zn 2-Y film was about 13 kOe and that of Co2-Y was too large beyond our experimental limits.
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M3 - Conference contribution
AN - SCOPUS:34249878489
SN - 1558995668
SN - 9781558995666
T3 - Materials Research Society Symposium Proceedings
SP - 43
EP - 48
BT - Materials Issues for Tunable RF and Microwave Devices II
T2 - 2000 MRS Fall Meeting
Y2 - 27 November 2000 through 1 December 2000
ER -