Low-temperature fabrication of ion-induced Ge nanostructures: Effect of simultaneous Al supply

Ako Miyawaki, Toshiaki Hayashi, Masaki Tanemura, Yasuhiko Hayashi, Tomoharu Tokunaga, Tetsuo Soga

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.

Original languageEnglish
Pages (from-to)1417-1420
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE92-C
Issue number12
DOIs
Publication statusPublished - Jan 1 2009
Externally publishedYes

Keywords

  • Ge
  • Ion irradiation
  • Nanomaterial
  • Nanorod
  • Nanostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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