TY - GEN
T1 - Low-Temperature Fabrication and Characterization of Ion-Induced Ge Nanostructures
AU - Miyawaki, A.
AU - Hayashi, T.
AU - Ghosh, P.
AU - Tanemura, M.
AU - Hayashi, Y.
AU - Tokunaga, T.
PY - 2010/5/5
Y1 - 2010/5/5
N2 - Ge surfaces were irradiated by Ar+ ions at 600 eV with and without a simultaneous supply of Ge, Au or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by nanorods for Au supply cases and by nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, the nanorods formed with Au or Al supply possessed a bottleneck structure. Thus, the ion-induced Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
AB - Ge surfaces were irradiated by Ar+ ions at 600 eV with and without a simultaneous supply of Ge, Au or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by nanorods for Au supply cases and by nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, the nanorods formed with Au or Al supply possessed a bottleneck structure. Thus, the ion-induced Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
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U2 - 10.1109/INEC.2010.5424518
DO - 10.1109/INEC.2010.5424518
M3 - Conference contribution
AN - SCOPUS:77951654158
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 398
EP - 399
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -