Low resistivity p-ZnO films fabricated by sol-gel spin coating

Yongge Cao, Lei Miao, Sakae Tanemura, Masaki Tanemura, Yohei Kuno, Yasuhiko Hayashi

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.

Original languageEnglish
Article number251116
JournalApplied Physics Letters
Volume88
Issue number25
DOIs
Publication statusPublished - Jun 19 2006
Externally publishedYes

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coating
gels
homojunctions
electrical resistivity
quartz
conductivity
glass
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low resistivity p-ZnO films fabricated by sol-gel spin coating. / Cao, Yongge; Miao, Lei; Tanemura, Sakae; Tanemura, Masaki; Kuno, Yohei; Hayashi, Yasuhiko.

In: Applied Physics Letters, Vol. 88, No. 25, 251116, 19.06.2006.

Research output: Contribution to journalArticle

Cao, Y, Miao, L, Tanemura, S, Tanemura, M, Kuno, Y & Hayashi, Y 2006, 'Low resistivity p-ZnO films fabricated by sol-gel spin coating', Applied Physics Letters, vol. 88, no. 25, 251116. https://doi.org/10.1063/1.2215618
Cao, Yongge ; Miao, Lei ; Tanemura, Sakae ; Tanemura, Masaki ; Kuno, Yohei ; Hayashi, Yasuhiko. / Low resistivity p-ZnO films fabricated by sol-gel spin coating. In: Applied Physics Letters. 2006 ; Vol. 88, No. 25.
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