Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

Yoshihiro Akagi, Katsumi Hanamoto, Hiroyuki Suzuki, Takanori Katoh, Muneo Sasaki, Shigeru Imai, Masaru Tsudagawa, Yasuyuki Nakayama, Hidejiro Miki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (p = 1.3 × 10-4 Ω · cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.

Original languageEnglish
Pages (from-to)6846-6850
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number12 A
DOIs
Publication statusPublished - Dec 1 1999
Externally publishedYes

Keywords

  • Ablation
  • ITO
  • Indium-tin-oxide
  • Photo-excited process
  • Synchrotron radiation
  • Transparent conductive film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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