Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

Yoshihiro Akagi; Katsumi Hanamoto; Hiroyuki Suzuki; Takanori Katoh; Muneo Sasaki; Shigeru Imai; Masaru Tsudagawa; Yasuyuki Nakayama; Hidejiro Miki

doi:10.1143/jjap.38.6846

Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

Yoshihiro Akagi, Katsumi Hanamoto, Hiroyuki Suzuki, Takanori Katoh, Muneo Sasaki, Shigeru Imai, Masaru Tsudagawa, Yasuyuki Nakayama, Hidejiro Miki

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (p = 1.3 × 10^-4 Ω · cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.

Original language	English
Pages (from-to)	6846-6850
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.38.6846
Publication status	Published - Dec 1 1999
Externally published	Yes

Keywords

Ablation
ITO
Indium-tin-oxide
Photo-excited process
Synchrotron radiation
Transparent conductive film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.38.6846

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Akagi, Y., Hanamoto, K., Suzuki, H., Katoh, T., Sasaki, M., Imai, S., Tsudagawa, M., Nakayama, Y., & Miki, H. (1999). Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(12 A), 6846-6850. https://doi.org/10.1143/jjap.38.6846

Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation. / Akagi, Yoshihiro; Hanamoto, Katsumi; Suzuki, Hiroyuki et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 12 A, 01.12.1999, p. 6846-6850.

Research output: Contribution to journal › Article › peer-review

Akagi, Y, Hanamoto, K, Suzuki, H, Katoh, T, Sasaki, M, Imai, S, Tsudagawa, M, Nakayama, Y & Miki, H 1999, 'Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 38, no. 12 A, pp. 6846-6850. https://doi.org/10.1143/jjap.38.6846

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abstract = "High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (p = 1.3 × 10-4 Ω · cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.",

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AU - Akagi, Yoshihiro

AU - Hanamoto, Katsumi

AU - Suzuki, Hiroyuki

AU - Katoh, Takanori

AU - Sasaki, Muneo

AU - Imai, Shigeru

AU - Tsudagawa, Masaru

AU - Nakayama, Yasuyuki

AU - Miki, Hidejiro

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N2 - High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (p = 1.3 × 10-4 Ω · cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.

AB - High-transparency, low-electrical-resistivity indium-tin-oxide (ITO)thin films were prepared on quartz substrates using synchrotron radiation ablation at room temperature. The films had a low resistivity (p = 1.3 × 10-4 Ω · cm) and high-transparency properties in the visible region (T = 83% at 550 nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.

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KW - Indium-tin-oxide

KW - Photo-excited process

KW - Synchrotron radiation

KW - Transparent conductive film

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Low-resistivity highly transparent indium-tin-oxide thin films prepared at room temperature by synchrotron radiation ablation

Abstract

Keywords

ASJC Scopus subject areas

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