Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices

Kazuhiro Uehara, Y. Aota, S. Kameda, H. Nakase, K. Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Atomically-flat surface (0001) aluminum nitride (AlN) epitaxial films grown by metalorganic chemical vapor deposition (MOCVD) were investigated. To clarify the growth mechanism of the AlN film, dependences between growth rate and process parameters of MOCVD were evaluated. To investigate the relationship between surface roughness and dislocation, three types of dislocation were observed by transmission electron microscopy (TEM). It was found that suppression of the thermal convection was indispensable for growth of atomically-flat surface AlN. From TEM observation, periodical misfit-type dislocation was observed only within the 10-A-thick interface between AlN and sapphire substrate. The density of edge-type dislocation in the AlN surface region was as low as 1010-1011 cm-2. Screw-type dislocation mostly stopped propagating along [0002]AlN within the thickness of 0.5 μm which agreed with the thickness of changing rough surface AlN to atomically-flat surface AlN. It is considered that suppression of screw-type dislocation was contributed to atomically-flat surface AlN.

Original languageEnglish
Title of host publication2005 IEEE Ultrasonics Symposium
Pages455-458
Number of pages4
Volume1
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event2005 IEEE Ultrasonics Symposium - Rotterdam, Netherlands
Duration: Sep 18 2005Sep 21 2005

Other

Other2005 IEEE Ultrasonics Symposium
CountryNetherlands
CityRotterdam
Period9/18/059/21/05

Fingerprint

Aluminum nitride
Metallorganic chemical vapor deposition
Transmission electron microscopy
Epitaxial films
Sapphire
Surface roughness

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uehara, K., Aota, Y., Kameda, S., Nakase, H., & Tsubouchi, K. (2005). Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices. In 2005 IEEE Ultrasonics Symposium (Vol. 1, pp. 455-458). [1602891] https://doi.org/10.1109/ULTSYM.2005.1602891

Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices. / Uehara, Kazuhiro; Aota, Y.; Kameda, S.; Nakase, H.; Tsubouchi, K.

2005 IEEE Ultrasonics Symposium. Vol. 1 2005. p. 455-458 1602891.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uehara, K, Aota, Y, Kameda, S, Nakase, H & Tsubouchi, K 2005, Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices. in 2005 IEEE Ultrasonics Symposium. vol. 1, 1602891, pp. 455-458, 2005 IEEE Ultrasonics Symposium, Rotterdam, Netherlands, 9/18/05. https://doi.org/10.1109/ULTSYM.2005.1602891
Uehara K, Aota Y, Kameda S, Nakase H, Tsubouchi K. Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices. In 2005 IEEE Ultrasonics Symposium. Vol. 1. 2005. p. 455-458. 1602891 https://doi.org/10.1109/ULTSYM.2005.1602891
Uehara, Kazuhiro ; Aota, Y. ; Kameda, S. ; Nakase, H. ; Tsubouchi, K. / Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices. 2005 IEEE Ultrasonics Symposium. Vol. 1 2005. pp. 455-458
@inproceedings{d97d6959e6e74112b94db9d5252a0b7e,
title = "Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices",
abstract = "Atomically-flat surface (0001) aluminum nitride (AlN) epitaxial films grown by metalorganic chemical vapor deposition (MOCVD) were investigated. To clarify the growth mechanism of the AlN film, dependences between growth rate and process parameters of MOCVD were evaluated. To investigate the relationship between surface roughness and dislocation, three types of dislocation were observed by transmission electron microscopy (TEM). It was found that suppression of the thermal convection was indispensable for growth of atomically-flat surface AlN. From TEM observation, periodical misfit-type dislocation was observed only within the 10-A-thick interface between AlN and sapphire substrate. The density of edge-type dislocation in the AlN surface region was as low as 1010-1011 cm-2. Screw-type dislocation mostly stopped propagating along [0002]AlN within the thickness of 0.5 μm which agreed with the thickness of changing rough surface AlN to atomically-flat surface AlN. It is considered that suppression of screw-type dislocation was contributed to atomically-flat surface AlN.",
author = "Kazuhiro Uehara and Y. Aota and S. Kameda and H. Nakase and K. Tsubouchi",
year = "2005",
doi = "10.1109/ULTSYM.2005.1602891",
language = "English",
isbn = "0780393821",
volume = "1",
pages = "455--458",
booktitle = "2005 IEEE Ultrasonics Symposium",

}

TY - GEN

T1 - Low propagation loss of atomically-flat surface AlN with low dislocation density for 5-GHz band SAW devices

AU - Uehara, Kazuhiro

AU - Aota, Y.

AU - Kameda, S.

AU - Nakase, H.

AU - Tsubouchi, K.

PY - 2005

Y1 - 2005

N2 - Atomically-flat surface (0001) aluminum nitride (AlN) epitaxial films grown by metalorganic chemical vapor deposition (MOCVD) were investigated. To clarify the growth mechanism of the AlN film, dependences between growth rate and process parameters of MOCVD were evaluated. To investigate the relationship between surface roughness and dislocation, three types of dislocation were observed by transmission electron microscopy (TEM). It was found that suppression of the thermal convection was indispensable for growth of atomically-flat surface AlN. From TEM observation, periodical misfit-type dislocation was observed only within the 10-A-thick interface between AlN and sapphire substrate. The density of edge-type dislocation in the AlN surface region was as low as 1010-1011 cm-2. Screw-type dislocation mostly stopped propagating along [0002]AlN within the thickness of 0.5 μm which agreed with the thickness of changing rough surface AlN to atomically-flat surface AlN. It is considered that suppression of screw-type dislocation was contributed to atomically-flat surface AlN.

AB - Atomically-flat surface (0001) aluminum nitride (AlN) epitaxial films grown by metalorganic chemical vapor deposition (MOCVD) were investigated. To clarify the growth mechanism of the AlN film, dependences between growth rate and process parameters of MOCVD were evaluated. To investigate the relationship between surface roughness and dislocation, three types of dislocation were observed by transmission electron microscopy (TEM). It was found that suppression of the thermal convection was indispensable for growth of atomically-flat surface AlN. From TEM observation, periodical misfit-type dislocation was observed only within the 10-A-thick interface between AlN and sapphire substrate. The density of edge-type dislocation in the AlN surface region was as low as 1010-1011 cm-2. Screw-type dislocation mostly stopped propagating along [0002]AlN within the thickness of 0.5 μm which agreed with the thickness of changing rough surface AlN to atomically-flat surface AlN. It is considered that suppression of screw-type dislocation was contributed to atomically-flat surface AlN.

UR - http://www.scopus.com/inward/record.url?scp=33847139808&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847139808&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2005.1602891

DO - 10.1109/ULTSYM.2005.1602891

M3 - Conference contribution

AN - SCOPUS:33847139808

SN - 0780393821

SN - 9780780393820

VL - 1

SP - 455

EP - 458

BT - 2005 IEEE Ultrasonics Symposium

ER -