Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films

C. Jariwala; A. Chainani; R. Eguchi; M. Matsunami; S. Shin; S. Bhatt; V. Dalal; P. I. John

doi:10.1063/1.3023066

Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films

C. Jariwala, A. Chainani, R. Eguchi, M. Matsunami, S. Shin, S. Bhatt, V. Dalal, P. I. John

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

A low power density very-high-frequency (VHF) (55 MHz) H₂ plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N _i) and lower electron temperature (T_e) compared to a MHC 13.56 MHz H₂ plasma. The N_i dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-N_i Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.

Original language	English
Article number	191502
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3023066
Publication status	Published - Nov 21 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3023066

Fingerprint Dive into the research topics of 'Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films'. Together they form a unique fingerprint.

Cite this

Jariwala, C., Chainani, A., Eguchi, R., Matsunami, M., Shin, S., Bhatt, S., Dalal, V., & John, P. I. (2008). Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films. Applied Physics Letters, 93(19), [191502]. https://doi.org/10.1063/1.3023066

@article{ae68b66a25ce4a7f995ea6736e42be19,

title = "Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films",

abstract = "A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.",

author = "C. Jariwala and A. Chainani and R. Eguchi and M. Matsunami and S. Shin and S. Bhatt and V. Dalal and John, {P. I.}",

year = "2008",

month = nov,

day = "21",

doi = "10.1063/1.3023066",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films

AU - Jariwala, C.

AU - Chainani, A.

AU - Eguchi, R.

AU - Matsunami, M.

AU - Shin, S.

AU - Bhatt, S.

AU - Dalal, V.

AU - John, P. I.

PY - 2008/11/21

Y1 - 2008/11/21

N2 - A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.

AB - A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.

UR - http://www.scopus.com/inward/record.url?scp=56249089657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56249089657&partnerID=8YFLogxK

U2 - 10.1063/1.3023066

DO - 10.1063/1.3023066

M3 - Article

AN - SCOPUS:56249089657

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 191502

ER -