Low power density multihole cathode very-high-frequency plasma for mixed phase Si: H thin films

C. Jariwala, A. Chainani, Ritsuko Eguchi, M. Matsunami, S. Shin, S. Bhatt, V. Dalal, P. I. John

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.

Original languageEnglish
Article number191502
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

very high frequencies
radiant flux density
cathodes
thin films
collisional plasmas
plasma temperature
electrostatic probes
crystallites
photoelectric emission
atomic force microscopy
electron energy
high resolution
matrices
profiles
geometry
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jariwala, C., Chainani, A., Eguchi, R., Matsunami, M., Shin, S., Bhatt, S., ... John, P. I. (2008). Low power density multihole cathode very-high-frequency plasma for mixed phase Si: H thin films. Applied Physics Letters, 93(19), [191502]. https://doi.org/10.1063/1.3023066

Low power density multihole cathode very-high-frequency plasma for mixed phase Si : H thin films. / Jariwala, C.; Chainani, A.; Eguchi, Ritsuko; Matsunami, M.; Shin, S.; Bhatt, S.; Dalal, V.; John, P. I.

In: Applied Physics Letters, Vol. 93, No. 19, 191502, 2008.

Research output: Contribution to journalArticle

Jariwala, C, Chainani, A, Eguchi, R, Matsunami, M, Shin, S, Bhatt, S, Dalal, V & John, PI 2008, 'Low power density multihole cathode very-high-frequency plasma for mixed phase Si: H thin films', Applied Physics Letters, vol. 93, no. 19, 191502. https://doi.org/10.1063/1.3023066
Jariwala, C. ; Chainani, A. ; Eguchi, Ritsuko ; Matsunami, M. ; Shin, S. ; Bhatt, S. ; Dalal, V. ; John, P. I. / Low power density multihole cathode very-high-frequency plasma for mixed phase Si : H thin films. In: Applied Physics Letters. 2008 ; Vol. 93, No. 19.
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