Low power density multihole cathode very-high-frequency plasma for mixed phase Si: H thin films

C. Jariwala, A. Chainani, Ritsuko Eguchi, M. Matsunami, S. Shin, S. Bhatt, V. Dalal, P. I. John

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Abstract

A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.

Original languageEnglish
Article number191502
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jariwala, C., Chainani, A., Eguchi, R., Matsunami, M., Shin, S., Bhatt, S., Dalal, V., & John, P. I. (2008). Low power density multihole cathode very-high-frequency plasma for mixed phase Si: H thin films. Applied Physics Letters, 93(19), [191502]. https://doi.org/10.1063/1.3023066