Abstract
A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.
| Original language | English |
|---|---|
| Article number | 191502 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Low power density multihole cathode very-high-frequency plasma for mixed phase Si : H thin films. / Jariwala, C.; Chainani, A.; Eguchi, Ritsuko; Matsunami, M.; Shin, S.; Bhatt, S.; Dalal, V.; John, P. I.
In: Applied Physics Letters, Vol. 93, No. 19, 191502, 2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low power density multihole cathode very-high-frequency plasma for mixed phase Si
T2 - H thin films
AU - Jariwala, C.
AU - Chainani, A.
AU - Eguchi, Ritsuko
AU - Matsunami, M.
AU - Shin, S.
AU - Bhatt, S.
AU - Dalal, V.
AU - John, P. I.
PY - 2008
Y1 - 2008
N2 - A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.
AB - A low power density very-high-frequency (VHF) (55 MHz) H2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N i) and lower electron temperature (Te) compared to a MHC 13.56 MHz H2 plasma. The Ni dependence on power indicates an Ohmic plasma, while Te is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (μc+a-) Si:H thin films at a substrate temperature of 60 °C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing ∼510±40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-Ni Ohmic collisional plasma, suitable for low temperature deposition of μc + a-Si:H thin films.
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U2 - 10.1063/1.3023066
DO - 10.1063/1.3023066
M3 - Article
AN - SCOPUS:56249089657
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 191502
ER -