Abstract
The transfer function dV/dΦ and the noise characteristics of a low-Tc superconducting quantum interference device (SQUID) have been improved by annealing to adjust the critical current, thereby optimizing the McCumber parameter βc- A SQUID structure suitable for annealing and using surface nitridation and planarization has also been developed. By annealing a SQUID that initially has a β c greater than 1, the I-V characteristics can be changed from characteristics with hysteresis to characteristics without hysteresis. A SQUID with = 0.81, close to the hysteresis limitation, had a large dV/dΦ (3.7 mV/Φ0) and good noise characteristics (1.5 μϕ0/√hz at 100 Hz and 3.0µΦ0/√Hz at 1 Hz). These characteristics can be attained even when using a simple measuring circuit connected directly to preamplifier without adaptive components such as flux modulation or additional positive feedback (APF).
| Original language | English |
|---|---|
| Pages (from-to) | 3488-3493 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 5 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1995 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
Cite this
Low-Noise Superconducting Quantum Interference Device with a High dV/dΦ Optimized by Thermally Controlling Critical Current. / Tsukada, Keiji; Kawai, Jun; Takada, Youichi; Adachi, Akira.
In: IEEE Transactions on Applied Superconductivity, Vol. 5, No. 3, 1995, p. 3488-3493.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-Noise Superconducting Quantum Interference Device with a High dV/dΦ Optimized by Thermally Controlling Critical Current
AU - Tsukada, Keiji
AU - Kawai, Jun
AU - Takada, Youichi
AU - Adachi, Akira
PY - 1995
Y1 - 1995
N2 - The transfer function dV/dΦ and the noise characteristics of a low-Tc superconducting quantum interference device (SQUID) have been improved by annealing to adjust the critical current, thereby optimizing the McCumber parameter βc- A SQUID structure suitable for annealing and using surface nitridation and planarization has also been developed. By annealing a SQUID that initially has a β c greater than 1, the I-V characteristics can be changed from characteristics with hysteresis to characteristics without hysteresis. A SQUID with = 0.81, close to the hysteresis limitation, had a large dV/dΦ (3.7 mV/Φ0) and good noise characteristics (1.5 μϕ0/√hz at 100 Hz and 3.0µΦ0/√Hz at 1 Hz). These characteristics can be attained even when using a simple measuring circuit connected directly to preamplifier without adaptive components such as flux modulation or additional positive feedback (APF).
AB - The transfer function dV/dΦ and the noise characteristics of a low-Tc superconducting quantum interference device (SQUID) have been improved by annealing to adjust the critical current, thereby optimizing the McCumber parameter βc- A SQUID structure suitable for annealing and using surface nitridation and planarization has also been developed. By annealing a SQUID that initially has a β c greater than 1, the I-V characteristics can be changed from characteristics with hysteresis to characteristics without hysteresis. A SQUID with = 0.81, close to the hysteresis limitation, had a large dV/dΦ (3.7 mV/Φ0) and good noise characteristics (1.5 μϕ0/√hz at 100 Hz and 3.0µΦ0/√Hz at 1 Hz). These characteristics can be attained even when using a simple measuring circuit connected directly to preamplifier without adaptive components such as flux modulation or additional positive feedback (APF).
UR - http://www.scopus.com/inward/record.url?scp=0029378405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029378405&partnerID=8YFLogxK
U2 - 10.1109/77.413156
DO - 10.1109/77.413156
M3 - Article
AN - SCOPUS:0029378405
VL - 5
SP - 3488
EP - 3493
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
SN - 1051-8223
IS - 3
ER -