Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

Hideki Fukano, Munehisa Tamura, Takayuki Yamanaka, Hiroki Nakajima, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages573-576
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: May 31 2004Jun 4 2004

Other

Other2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
CountryJapan
CityKagoshima
Period5/31/046/4/04

Fingerprint

Electroabsorption modulators
low voltage
modulators
extinction
bandwidth
Bandwidth
Electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Fukano, H., Tamura, M., Yamanaka, T., Nakajima, H., Akage, Y., Kondo, Y., & Saitoh, T. (2004). Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 573-576)

Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s. / Fukano, Hideki; Tamura, Munehisa; Yamanaka, Takayuki; Nakajima, Hiroki; Akage, Yuichi; Kondo, Yasuhiro; Saitoh, Tadashi.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 573-576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fukano, H, Tamura, M, Yamanaka, T, Nakajima, H, Akage, Y, Kondo, Y & Saitoh, T 2004, Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 573-576, 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM, Kagoshima, Japan, 5/31/04.
Fukano H, Tamura M, Yamanaka T, Nakajima H, Akage Y, Kondo Y et al. Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 573-576
Fukano, Hideki ; Tamura, Munehisa ; Yamanaka, Takayuki ; Nakajima, Hiroki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi. / Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. pp. 573-576
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AU - Akage, Yuichi

AU - Kondo, Yasuhiro

AU - Saitoh, Tadashi

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