Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

Hideki Fukano, Munehisa Tamura, Takayuki Yamanaka, Hiroki Nakajima, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Dec 1 2004
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: May 31 2004Jun 4 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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