Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage

Hideki Fukano, Yuichi Akage, Yoshihiro Kawaguchi, Yasumasa Suzaki, Kenji Kishi, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We clarified experimentally that an EA-DFB laser in which the EAM and DFB parts are coupled with a passive waveguide provides a large bandwidth, even when a large reverse bias is applied to the EAM. This allows the chip to operate in a negative-chirp condition. We fabricated an EA-DFB module terminated with a 50 Ω resistor through a dc-block capacitor to suppress the increase in dc current as the reverse bias increases. A module equipped with our new EA-DFB chip successfully transmitted data over a distance of 3 km at a rate of 40 Gbit/s and at a driving voltage as low as 2 V.

Original languageEnglish
Pages (from-to)1129-1134
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume13
Issue number5
DOIs
Publication statusPublished - Sep 1 2007
Externally publishedYes

Keywords

  • DFB laser
  • Electroabsorption
  • Electroabsorption modulator (EAM)
  • Electroabsorption modulator integrated DFB laser (EA-DFB)
  • Low driving voltage

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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