Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Masayuki Okamoto, Genki Toyoda, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Tetsu Kachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN-based transistor and Schottky barrier diode (SBD) for a simulation program with integrated circuit emphasis (SPICE). The results of the SPICE simulation show that the static and dynamic characteristics of GaN-based devices are precisely simulated by the SPICE models. The application of a GaN-based device to a single-phase AC-AC direct converter results in a reduction of power loss of over 30% compared with a silicon-based one.

Original languageEnglish
Title of host publicationIEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings
Pages1795-1800
Number of pages6
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011 - Phoenix, AZ, United States
Duration: Sep 17 2011Sep 22 2011

Other

Other3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011
CountryUnited States
CityPhoenix, AZ
Period9/17/119/22/11

Fingerprint

Gallium nitride
High electron mobility transistors
Integrated circuits
Schottky barrier diodes
Circuit simulation
Power electronics
Silicon carbide
Transistors
Silicon

Keywords

  • AC-AC direct converter
  • gallium nitride
  • HEMT
  • Loss evaluation
  • SBD
  • Spice Model

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment

Cite this

Okamoto, M., Toyoda, G., Hiraki, E., Tanaka, T., Hashizume, T., & Kachi, T. (2011). Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. In IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings (pp. 1795-1800). [6064002] https://doi.org/10.1109/ECCE.2011.6064002

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. / Okamoto, Masayuki; Toyoda, Genki; Hiraki, Eiji; Tanaka, Toshihiko; Hashizume, Tamotsu; Kachi, Tetsu.

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. p. 1795-1800 6064002.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okamoto, M, Toyoda, G, Hiraki, E, Tanaka, T, Hashizume, T & Kachi, T 2011, Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. in IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings., 6064002, pp. 1795-1800, 3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011, Phoenix, AZ, United States, 9/17/11. https://doi.org/10.1109/ECCE.2011.6064002
Okamoto M, Toyoda G, Hiraki E, Tanaka T, Hashizume T, Kachi T. Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. In IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. p. 1795-1800. 6064002 https://doi.org/10.1109/ECCE.2011.6064002
Okamoto, Masayuki ; Toyoda, Genki ; Hiraki, Eiji ; Tanaka, Toshihiko ; Hashizume, Tamotsu ; Kachi, Tetsu. / Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. pp. 1795-1800
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