Long-life multiple-ISFETS with polymeric gates

Keiji Tsukada, M. Sebata, Y. Miyahara, H. Miyagi

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Long-life, integrated multiple-ISFETs with CMOS interface circuits have been developed. The interface circuits are designed for impedance conversion and rapid multiplexing of the signal from each ISFET. Three kinds of ion-selective membranes for sodium, potassium and chloride are formed on the gates and separated by a patterned thick polyimide layer. The poor adhesion of the polymeric membrane to the ISFET gate is improved by selecting the proper plasticizer for use in the membrane. As a result, a chemical response for sodium, potassium and chloride can be obtained for more than two months.

Original languageEnglish
Pages (from-to)329-336
Number of pages8
JournalSensors and Actuators
Volume18
Issue number3-4
DOIs
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

Ion sensitive field effect transistors
Potassium
Ion selective membranes
Sodium
Polymeric membranes
Networks (circuits)
Plasticizers
Multiplexing
Polyimides
Adhesion
Membranes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Long-life multiple-ISFETS with polymeric gates. / Tsukada, Keiji; Sebata, M.; Miyahara, Y.; Miyagi, H.

In: Sensors and Actuators, Vol. 18, No. 3-4, 1989, p. 329-336.

Research output: Contribution to journalArticle

Tsukada, Keiji ; Sebata, M. ; Miyahara, Y. ; Miyagi, H. / Long-life multiple-ISFETS with polymeric gates. In: Sensors and Actuators. 1989 ; Vol. 18, No. 3-4. pp. 329-336.
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