Logarithmic temperature dependence of resistivity in heavily doped conducting polymers at low temperature

T. Ishiguro, H. Kaneko, Y. Nogami, H. Ishimoto, H. Nishiyama, J. Tsukamoto, A. Takahashi, M. Yamaura, T. Hagiwara, K. Sato

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Abstract

Electrical resistivities of heavily doped polyacetylene and polypyrrole exhibit a wide range of temperature variation as a function of the degree of disorder. Thermal activation behavior is found for the strongly disordered state, while a weak temperature dependence down to the mK region is found for the weakly disordered state. In the intermediate region we found the resistivity represented by a logT dependence, in a manner similar to amorphous metals. As a cause of the logT dependence, the possibility of scattering via interaction with molecular configurations possessing low-energy internal degrees of freedom is considered.

Original languageEnglish
Pages (from-to)660-663
Number of pages4
JournalPhysical Review Letters
Volume69
Issue number4
DOIs
Publication statusPublished - Jan 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Ishiguro, T., Kaneko, H., Nogami, Y., Ishimoto, H., Nishiyama, H., Tsukamoto, J., Takahashi, A., Yamaura, M., Hagiwara, T., & Sato, K. (1992). Logarithmic temperature dependence of resistivity in heavily doped conducting polymers at low temperature. Physical Review Letters, 69(4), 660-663. https://doi.org/10.1103/PhysRevLett.69.660