TY - JOUR
T1 - Logarithmic temperature dependence of resistivity in heavily doped conducting polymers at low temperature
AU - Ishiguro, T.
AU - Kaneko, H.
AU - Nogami, Y.
AU - Ishimoto, H.
AU - Nishiyama, H.
AU - Tsukamoto, J.
AU - Takahashi, A.
AU - Yamaura, M.
AU - Hagiwara, T.
AU - Sato, K.
PY - 1992
Y1 - 1992
N2 - Electrical resistivities of heavily doped polyacetylene and polypyrrole exhibit a wide range of temperature variation as a function of the degree of disorder. Thermal activation behavior is found for the strongly disordered state, while a weak temperature dependence down to the mK region is found for the weakly disordered state. In the intermediate region we found the resistivity represented by a logT dependence, in a manner similar to amorphous metals. As a cause of the logT dependence, the possibility of scattering via interaction with molecular configurations possessing low-energy internal degrees of freedom is considered.
AB - Electrical resistivities of heavily doped polyacetylene and polypyrrole exhibit a wide range of temperature variation as a function of the degree of disorder. Thermal activation behavior is found for the strongly disordered state, while a weak temperature dependence down to the mK region is found for the weakly disordered state. In the intermediate region we found the resistivity represented by a logT dependence, in a manner similar to amorphous metals. As a cause of the logT dependence, the possibility of scattering via interaction with molecular configurations possessing low-energy internal degrees of freedom is considered.
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U2 - 10.1103/PhysRevLett.69.660
DO - 10.1103/PhysRevLett.69.660
M3 - Article
AN - SCOPUS:3643115694
VL - 69
SP - 660
EP - 663
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 4
ER -