Abstract
The hole doping effects on the O 1s x-ray absorption spectrum (XAS) of a quasi-one-dimensional charge-transfer insulator, Ca2+xY 2-xCu5O10, are discussed on the basis of numerically-exact diagonalization calculations applied to finite-size cluster models. The angle-resolved photoemission and inverse one are also calculated to understand the characteristic features in the XAS. The role of "edge-share"-type crystal structure, as well as that of electron correlation, is emphasized to understand the localized nature of the electronic states. The dp model Hamiltonian used in the O 1s XAS calculation can be mapped onto a single-band Hubbard model with the intra-atomic Coulomb repulsion, U, and the first and second neighbor hoppings, t1 and t2 (t 1t2).
Original language | English |
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Pages (from-to) | 182-184 |
Number of pages | 3 |
Journal | Physica Scripta T |
Volume | T115 |
DOIs | |
Publication status | Published - 2005 |
Event | 12th X-ray Absorption Fine Structure International Conference, XAFS12 - Malmo, Sweden Duration: Jun 23 2003 → Jun 27 2003 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Mathematical Physics
- Condensed Matter Physics