Localized nature of valence-hole states in Ca2+xY 2-xCu5O10 shown by O 1s XAS

Research output: Chapter in Book/Report/Conference proceedingChapter


The hole doping effects on the O 1s x-ray absorption spectrum (XAS) of a quasi-one-dimensional charge-transfer insulator, Ca2+xY 2-xCu5O10, are discussed on the basis of numerically-exact diagonalization calculations applied to finite-size cluster models. The angle-resolved photoemission and inverse one are also calculated to understand the characteristic features in the XAS. The role of "edge-share"-type crystal structure, as well as that of electron correlation, is emphasized to understand the localized nature of the electronic states. The dp model Hamiltonian used in the O 1s XAS calculation can be mapped onto a single-band Hubbard model with the intra-atomic Coulomb repulsion, U, and the first and second neighbor hoppings, t1 and t2 (t 1t2).

Original languageEnglish
Title of host publicationPhysica Scripta T
Number of pages3
Publication statusPublished - 2005
Event12th X-ray Absorption Fine Structure International Conference, XAFS12 - Malmo, Sweden
Duration: Jun 23 2003Jun 27 2003


Other12th X-ray Absorption Fine Structure International Conference, XAFS12


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this