Local Ir dedimerization followed by ligand-hole hopping in X-ray irradiated thiospinel

Haruhiro Hiraka, Daiju Matsumura, Kazumasa Horigane, Jun′ichiro Mizuki

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The extended X-ray-absorption fine structure of a spinel CuIr2(S0.95Se0.05)4 powder sample, which has the charge-ordered temperature TCO=190 K, was determined at the Ir L3 edge for a wide temperature range. All the local structure parameters on the Ir–Ir bonds signified the second structural change at T*~70 K. Remarkably, the number of Ir dimers, ND(T), decreased by ~10% below T* [ND(0)/ND(T*)~0.9], which indicates partial dedimerization by X-ray irradiation. We also reanalyzed the resistance data of CuIr2S4 [Furubayashi et al., Solid State Comm. 126, 617 (2003)] with the variable-range hopping model by focusing on the density of states at EF, g. The X-ray-induced decrease in resistance was quantitatively explained as a result of the increase in g, which was attributed to the release of holes from the 10%-dedimerized Ir ions. We suppose that the released holes hop over the ligand chalcogen site and discuss the origin of X-ray-induced structural modulations [Kiryukhin et al., Phys. Rev. Lett. 97, 225503 (2006)] in terms of segregation of broken dimers.

    Original languageEnglish
    Article number109870
    JournalJournal of Physics and Chemistry of Solids
    Volume150
    DOIs
    Publication statusPublished - Mar 2021

    Keywords

    • Dedimerization
    • EXAFS
    • Ligand hole
    • Variable-range hopping
    • X-ray irradiation

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

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