Linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

Original languageEnglish
Pages (from-to)635-640
Number of pages6
JournalJournal of Photopolymer Science and Technology
Volume10
Issue number4
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Linewidth
Polymers
Nanolithography
Electron beams
Molecular weight

Keywords

  • Electron beam nanolithography
  • Linewidth fluctuations
  • Polymer aggregates

ASJC Scopus subject areas

  • Polymers and Plastics
  • Materials Chemistry

Cite this

Yamaguchi, T., Namatsu, H., Nagase, M., Yamazaki, K., & Kurihara, K. (1997). Linewidth fluctuations caused by polymer aggregates in resist films. Journal of Photopolymer Science and Technology, 10(4), 635-640.

Linewidth fluctuations caused by polymer aggregates in resist films. / Yamaguchi, Toru; Namatsu, Hideo; Nagase, Masao; Yamazaki, Kenji; Kurihara, Kenji.

In: Journal of Photopolymer Science and Technology, Vol. 10, No. 4, 1997, p. 635-640.

Research output: Contribution to journalArticle

Yamaguchi, T, Namatsu, H, Nagase, M, Yamazaki, K & Kurihara, K 1997, 'Linewidth fluctuations caused by polymer aggregates in resist films', Journal of Photopolymer Science and Technology, vol. 10, no. 4, pp. 635-640.
Yamaguchi T, Namatsu H, Nagase M, Yamazaki K, Kurihara K. Linewidth fluctuations caused by polymer aggregates in resist films. Journal of Photopolymer Science and Technology. 1997;10(4):635-640.
Yamaguchi, Toru ; Namatsu, Hideo ; Nagase, Masao ; Yamazaki, Kenji ; Kurihara, Kenji. / Linewidth fluctuations caused by polymer aggregates in resist films. In: Journal of Photopolymer Science and Technology. 1997 ; Vol. 10, No. 4. pp. 635-640.
@article{5f5f966076a9459aa985119bba8c1f9b,
title = "Linewidth fluctuations caused by polymer aggregates in resist films",
abstract = "We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.",
keywords = "Electron beam nanolithography, Linewidth fluctuations, Polymer aggregates",
author = "Toru Yamaguchi and Hideo Namatsu and Masao Nagase and Kenji Yamazaki and Kenji Kurihara",
year = "1997",
language = "English",
volume = "10",
pages = "635--640",
journal = "Journal of Photopolymer Science and Technology",
issn = "0914-9244",
publisher = "Tokai University",
number = "4",

}

TY - JOUR

T1 - Linewidth fluctuations caused by polymer aggregates in resist films

AU - Yamaguchi, Toru

AU - Namatsu, Hideo

AU - Nagase, Masao

AU - Yamazaki, Kenji

AU - Kurihara, Kenji

PY - 1997

Y1 - 1997

N2 - We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

AB - We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

KW - Electron beam nanolithography

KW - Linewidth fluctuations

KW - Polymer aggregates

UR - http://www.scopus.com/inward/record.url?scp=0010253729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0010253729&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0010253729

VL - 10

SP - 635

EP - 640

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

SN - 0914-9244

IS - 4

ER -