Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

Shinya Kondo, Reijiro Shimura, Takasi Teranisi, Akira Kishimoto, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOScompatible EO devices.

Original languageEnglish
Article number070905
JournalJapanese Journal of Applied Physics
Volume60
Issue number7
DOIs
Publication statusPublished - Jul 2021

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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