Line-edge roughness: Characterization and material origin

T. Yamaguchi, K. Yamazaki, M. Nagase, H. Namatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Among lithographic characteristics, line-edge roughness (LER) of resist patterns now assumes even greater importance than before. This is because the variation of device sizes due to LER cannot be neglected as device sizes shrink. Therefore, LER has to be reduced as much as possible in next-generation lithography. For LER reduction, it is essential to elucidate its cause based on precise evaluations. We have been working to develop methods for the measurement and analysis of LER and elucidate the cause of LER for an electron-beam chain-scission type of resist, which has a simple imaging mechanism. In this report, we describe two LER issues: its characterization and material origin.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages78-79
Number of pages2
ISBN (Print)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: Nov 6 2002Nov 8 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period11/6/0211/8/02

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Yamaguchi, T., Yamazaki, K., Nagase, M., & Namatsu, H. (2002). Line-edge roughness: Characterization and material origin. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 78-79). [1178552] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178552