Line-edge roughness: Characterization and material origin

T. Yamaguchi; K. Yamazaki; M. Nagase; H. Namatsu

doi:10.1109/IMNC.2002.1178552

Line-edge roughness: Characterization and material origin

T. Yamaguchi, K. Yamazaki, M. Nagase, H. Namatsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Among lithographic characteristics, line-edge roughness (LER) of resist patterns now assumes even greater importance than before. This is because the variation of device sizes due to LER cannot be neglected as device sizes shrink. Therefore, LER has to be reduced as much as possible in next-generation lithography. For LER reduction, it is essential to elucidate its cause based on precise evaluations. We have been working to develop methods for the measurement and analysis of LER and elucidate the cause of LER for an electron-beam chain-scission type of resist, which has a simple imaging mechanism. In this report, we describe two LER issues: its characterization and material origin.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	78-79
Number of pages	2
ISBN (Print)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178552
Publication status	Published - 2002
Externally published	Yes
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: Nov 6 2002 → Nov 8 2002

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	11/6/02 → 11/8/02

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178552

Cite this

Yamaguchi, T, Yamazaki, K, Nagase, M & Namatsu, H 2002, Line-edge roughness: Characterization and material origin. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178552, Institute of Electrical and Electronics Engineers Inc., pp. 78-79, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 11/6/02. https://doi.org/10.1109/IMNC.2002.1178552

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abstract = "Among lithographic characteristics, line-edge roughness (LER) of resist patterns now assumes even greater importance than before. This is because the variation of device sizes due to LER cannot be neglected as device sizes shrink. Therefore, LER has to be reduced as much as possible in next-generation lithography. For LER reduction, it is essential to elucidate its cause based on precise evaluations. We have been working to develop methods for the measurement and analysis of LER and elucidate the cause of LER for an electron-beam chain-scission type of resist, which has a simple imaging mechanism. In this report, we describe two LER issues: its characterization and material origin.",

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doi = "10.1109/IMNC.2002.1178552",

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T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

AU - Yamaguchi, T.

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AU - Nagase, M.

AU - Namatsu, H.

PY - 2002

Y1 - 2002

N2 - Among lithographic characteristics, line-edge roughness (LER) of resist patterns now assumes even greater importance than before. This is because the variation of device sizes due to LER cannot be neglected as device sizes shrink. Therefore, LER has to be reduced as much as possible in next-generation lithography. For LER reduction, it is essential to elucidate its cause based on precise evaluations. We have been working to develop methods for the measurement and analysis of LER and elucidate the cause of LER for an electron-beam chain-scission type of resist, which has a simple imaging mechanism. In this report, we describe two LER issues: its characterization and material origin.

AB - Among lithographic characteristics, line-edge roughness (LER) of resist patterns now assumes even greater importance than before. This is because the variation of device sizes due to LER cannot be neglected as device sizes shrink. Therefore, LER has to be reduced as much as possible in next-generation lithography. For LER reduction, it is essential to elucidate its cause based on precise evaluations. We have been working to develop methods for the measurement and analysis of LER and elucidate the cause of LER for an electron-beam chain-scission type of resist, which has a simple imaging mechanism. In this report, we describe two LER issues: its characterization and material origin.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Line-edge roughness: Characterization and material origin

Abstract

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