Lateral inhomogeneity in the electronic structure of a conjugated poly(3-hexylthiophene) thin film

How annealing influences the morphology of a highly regioregular poly(3-hexylthiophene) (RR-P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high-molecular-weight (MW) RR-P3HT films tend to show low crystallinity even after annealing, it is found that high-MW RR-P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR-P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high-MW RR-P3HT film.