TY - GEN
T1 - Laser-terahertz emission from the chemical sensing plate
AU - Kiwa, Toshihiko
AU - Kondo, Junichi
AU - Oka, Shohei
AU - Kawayama, Iwao
AU - Yamada, Hironobu
AU - Tonouchi, Masayoshi
AU - Tsukada, Keiji
PY - 2007/12/1
Y1 - 2007/12/1
N2 - A new type of sensing system to measure the concentration of the protons in the solutions by means of the laser-terahertz emission and detection was proposed and developed. The simple layered structures of SiO2/Si thin films on a sapphire substrate were prepared as a chemical sensing plate. The system measure the amplitude of the terahertz emission from the depletion layer of SiO2/Si interface by irradiating the femtosecond laser pulses with the center wavelength of 790 nm. The solution was contacted with the SiO 2 surface and the Si thin film layer was electrically grounded. An Ag/AgCl reference electrode was used to control the potential of the solution. When the proton was adsorbed on the surface of the plate, the surface electric dipole was formed at the surface, which changes the local field of the depletion layer. Thus the peak amplitude of terahertz emission was changed depending on the number of the proton adsorbed on the surface of the plate. Actually, we demonstrated that the peak amplitude of terahertz emission from the sensing plate increased by increasing the pH values of the test solution when the bias voltage of the solution was 0 V. (pH values indicate the concentration of the proton in the solution) and the sensitivity was about 31 μV/pH.
AB - A new type of sensing system to measure the concentration of the protons in the solutions by means of the laser-terahertz emission and detection was proposed and developed. The simple layered structures of SiO2/Si thin films on a sapphire substrate were prepared as a chemical sensing plate. The system measure the amplitude of the terahertz emission from the depletion layer of SiO2/Si interface by irradiating the femtosecond laser pulses with the center wavelength of 790 nm. The solution was contacted with the SiO 2 surface and the Si thin film layer was electrically grounded. An Ag/AgCl reference electrode was used to control the potential of the solution. When the proton was adsorbed on the surface of the plate, the surface electric dipole was formed at the surface, which changes the local field of the depletion layer. Thus the peak amplitude of terahertz emission was changed depending on the number of the proton adsorbed on the surface of the plate. Actually, we demonstrated that the peak amplitude of terahertz emission from the sensing plate increased by increasing the pH values of the test solution when the bias voltage of the solution was 0 V. (pH values indicate the concentration of the proton in the solution) and the sensitivity was about 31 μV/pH.
KW - Chemical transducers
KW - Submillimeter wave measurements
KW - Terahertz
KW - Ultrafast optics
UR - http://www.scopus.com/inward/record.url?scp=77951187064&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951187064&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77951187064
SN - 1424414385
SN - 9781424414383
T3 - IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics
SP - 285
EP - 286
BT - IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics
T2 - Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007
Y2 - 3 September 2007 through 7 September 2007
ER -