Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Harald Olaf Jeschke, Martin E. Garcia, Matthias Lenzner, Jörn Bonse, Jörg Krüger, Wolfgang Kautek

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.

Original languageEnglish
Pages (from-to)839-844
Number of pages6
JournalApplied Surface Science
Volume197-198
DOIs
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Silicon
Laser ablation
Ablation
laser ablation
ablation
Laser pulses
pulse duration
Ultrafast lasers
thresholds
silicon
pulses
Molecular dynamics
Melting
Experiments
melting
molecular dynamics
air
Computer simulation
Air
electronics

Keywords

  • Laser ablation
  • Pulse duration
  • Threshold of silicon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Laser ablation thresholds of silicon for different pulse durations : Theory and experiment. / Jeschke, Harald Olaf; Garcia, Martin E.; Lenzner, Matthias; Bonse, Jörn; Krüger, Jörg; Kautek, Wolfgang.

In: Applied Surface Science, Vol. 197-198, 2002, p. 839-844.

Research output: Contribution to journalArticle

Jeschke, Harald Olaf ; Garcia, Martin E. ; Lenzner, Matthias ; Bonse, Jörn ; Krüger, Jörg ; Kautek, Wolfgang. / Laser ablation thresholds of silicon for different pulse durations : Theory and experiment. In: Applied Surface Science. 2002 ; Vol. 197-198. pp. 839-844.
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