Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

Y. Muraoka, Y. Ueda, Z. Hiroi

Research output: Contribution to journalConference article

87 Citations (Scopus)

Abstract

Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

Original languageEnglish
Pages (from-to)965-967
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume63
Issue number6-8
DOIs
Publication statusPublished - Jun 1 2002
Externally publishedYes
EventProceedings of the 8th ISSP International Symposium - Tokyo, Japan
Duration: Nov 2 2001Nov 5 2001

Keywords

  • A. Thin films
  • B. Epitaxial growth
  • C. X-ray diffraction
  • D. Transport properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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