Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

Y. Muraoka, Y. Ueda, Z. Hiroi

Research output: Contribution to journalConference articlepeer-review

89 Citations (Scopus)

Abstract

Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

Original languageEnglish
Pages (from-to)965-967
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume63
Issue number6-8
DOIs
Publication statusPublished - Jun 2002
Externally publishedYes
EventProceedings of the 8th ISSP International Symposium - Tokyo, Japan
Duration: Nov 2 2001Nov 5 2001

Keywords

  • A. Thin films
  • B. Epitaxial growth
  • C. X-ray diffraction
  • D. Transport properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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