Abstract
Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
| Original language | English |
|---|---|
| Pages (from-to) | 965-967 |
| Number of pages | 3 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 63 |
| Issue number | 6-8 |
| DOIs | |
| Publication status | Published - Jun 2002 |
| Externally published | Yes |
Fingerprint
Keywords
- A. Thin films
- B. Epitaxial growth
- C. X-ray diffraction
- D. Transport properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates. / Muraoka, Yuji; Ueda, Y.; Hiroi, Z.
In: Journal of Physics and Chemistry of Solids, Vol. 63, No. 6-8, 06.2002, p. 965-967.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates
AU - Muraoka, Yuji
AU - Ueda, Y.
AU - Hiroi, Z.
PY - 2002/6
Y1 - 2002/6
N2 - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
AB - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
KW - A. Thin films
KW - B. Epitaxial growth
KW - C. X-ray diffraction
KW - D. Transport properties
UR - http://www.scopus.com/inward/record.url?scp=0036601668&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036601668&partnerID=8YFLogxK
U2 - 10.1016/S0022-3697(02)00098-7
DO - 10.1016/S0022-3697(02)00098-7
M3 - Article
AN - SCOPUS:0036601668
VL - 63
SP - 965
EP - 967
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 6-8
ER -