Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

Y. Muraoka; Y. Ueda; Z. Hiroi

doi:10.1016/S0022-3697(02)00098-7

Large modification of the metal-insulator transition temperature in strained VO₂ films grown on TiO₂ substrates

Y. Muraoka, Y. Ueda, Z. Hiroi

Research output: Contribution to journal › Conference article › peer-review

89 Citations (Scopus)

Abstract

Epitaxial thin films of vanadium dioxide (VO₂) have been grown on TiO₂ (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO₂ has been studied. A large reduction in the transition temperature T_MI from 341 K for a single crystal to 300 K has been observed in the film on TiO₂ (001) where the c-axis length is compressed owing to an epitaxial stress, while the T_MI has been increased to 369 K in the film on TiO₂ (110) where the c-axis length is expanded. The correlation between the c-axis length and T_MI is suggested: the shorter c-axis length results in the lower T_MI.

Original language	English
Pages (from-to)	965-967
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	63
Issue number	6-8
DOIs	https://doi.org/10.1016/S0022-3697(02)00098-7
Publication status	Published - Jun 1 2002
Externally published	Yes
Event	Proceedings of the 8th ISSP International Symposium - Tokyo, Japan Duration: Nov 2 2001 → Nov 5 2001

Keywords

A. Thin films
B. Epitaxial growth
C. X-ray diffraction
D. Transport properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/S0022-3697(02)00098-7

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Cite this

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title = "Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates",

abstract = "Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.",

keywords = "A. Thin films, B. Epitaxial growth, C. X-ray diffraction, D. Transport properties",

author = "Y. Muraoka and Y. Ueda and Z. Hiroi",

year = "2002",

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number = "6-8",

note = "Proceedings of the 8th ISSP International Symposium ; Conference date: 02-11-2001 Through 05-11-2001",

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T1 - Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

AU - Muraoka, Y.

AU - Ueda, Y.

AU - Hiroi, Z.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

AB - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. X-ray diffraction

KW - D. Transport properties

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