Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

Y. Muraoka; Y. Ueda; Z. Hiroi

doi:10.1016/S0022-3697(02)00098-7

Large modification of the metal-insulator transition temperature in strained VO₂ films grown on TiO₂ substrates

Y. Muraoka, Y. Ueda, Z. Hiroi

Research output: Contribution to journal › Conference article › peer-review

95 Citations (Scopus)

Abstract

Epitaxial thin films of vanadium dioxide (VO₂) have been grown on TiO₂ (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO₂ has been studied. A large reduction in the transition temperature T_MI from 341 K for a single crystal to 300 K has been observed in the film on TiO₂ (001) where the c-axis length is compressed owing to an epitaxial stress, while the T_MI has been increased to 369 K in the film on TiO₂ (110) where the c-axis length is expanded. The correlation between the c-axis length and T_MI is suggested: the shorter c-axis length results in the lower T_MI.

Original language	English
Pages (from-to)	965-967
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	63
Issue number	6-8
DOIs	https://doi.org/10.1016/S0022-3697(02)00098-7
Publication status	Published - Jun 2002
Externally published	Yes
Event	Proceedings of the 8th ISSP International Symposium - Tokyo, Japan Duration: Nov 2 2001 → Nov 5 2001

Keywords

A. Thin films
B. Epitaxial growth
C. X-ray diffraction
D. Transport properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/S0022-3697(02)00098-7

Cite this

@article{eaeb6926a3ef478aa55fe55f3d58c893,

title = "Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates",

abstract = "Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.",

keywords = "A. Thin films, B. Epitaxial growth, C. X-ray diffraction, D. Transport properties",

author = "Y. Muraoka and Y. Ueda and Z. Hiroi",

note = "Funding Information: The authors are very grateful to S. Nakatani for four circle X-ray measurements. This research was supported by a Grant-in-Aid for Scientific Research on Priority Areas (A) given by The Ministry of Education, Culture, Sports, Science and Technology, Japan.; Proceedings of the 8th ISSP International Symposium ; Conference date: 02-11-2001 Through 05-11-2001",

year = "2002",

month = jun,

doi = "10.1016/S0022-3697(02)00098-7",

language = "English",

volume = "63",

pages = "965--967",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "6-8",

}

TY - JOUR

T1 - Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates

AU - Muraoka, Y.

AU - Ueda, Y.

AU - Hiroi, Z.

N1 - Funding Information: The authors are very grateful to S. Nakatani for four circle X-ray measurements. This research was supported by a Grant-in-Aid for Scientific Research on Priority Areas (A) given by The Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2002/6

Y1 - 2002/6

N2 - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

AB - Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. X-ray diffraction

KW - D. Transport properties

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U2 - 10.1016/S0022-3697(02)00098-7

DO - 10.1016/S0022-3697(02)00098-7

M3 - Conference article

AN - SCOPUS:0036601668

VL - 63

SP - 965

EP - 967

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

IS - 6-8

T2 - Proceedings of the 8th ISSP International Symposium

Y2 - 2 November 2001 through 5 November 2001

ER -