Abstract
Epitaxial thin films of vanadium dioxide (VO2) have been grown on TiO2 (001) and (110) substrates and the effect of uniaxial stress along the c-axis on the metal-insulator transition (MIT) of VO2 has been studied. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
Original language | English |
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Pages (from-to) | 965-967 |
Number of pages | 3 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 63 |
Issue number | 6-8 |
DOIs | |
Publication status | Published - Jun 1 2002 |
Externally published | Yes |
Event | Proceedings of the 8th ISSP International Symposium - Tokyo, Japan Duration: Nov 2 2001 → Nov 5 2001 |
Keywords
- A. Thin films
- B. Epitaxial growth
- C. X-ray diffraction
- D. Transport properties
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics