Abstract
We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC.
| Original language | English |
|---|---|
| Article number | 232503 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Jun 18 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Miyazaki, H., Im, H. J., Terashima, K., Yagi, S., Kato, M., Soda, K., Ito, T., & Kimura, S. (2010). La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature. Applied Physics Letters, 96(23), [232503]. https://doi.org/10.1063/1.3416911