La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki; H. J. Im; K. Terashima; S. Yagi; M. Kato; K. Soda; T. Ito; S. Kimura

doi:10.1063/1.3416911

La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki, H. J. Im, K. Terashima, S. Yagi, M. Kato, K. Soda, T. Ito, S. Kimura

Graduate School of Natural Science and Technology

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (T_C) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T _C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in T_C.

Original language	English
Article number	232503
Journal	Applied Physics Letters
Volume	96
Issue number	23
DOIs	https://doi.org/10.1063/1.3416911
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature",

abstract = "We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC.",

author = "H. Miyazaki and Im, {H. J.} and K. Terashima and S. Yagi and M. Kato and K. Soda and T. Ito and S. Kimura",

note = "Funding Information: We would like to thank Professor T. Takeuchi for his experimental support of EDX measurement and technical staff members of the Institute for Molecular Science and of the UVSOR Facility for their devoted support. This work was partly supported by a Grant-in-Aid for Young Scientists (Start-up) (Grant No. 21840057) from MEXT of Japan. ",

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T2 - A rare earth ferromagnetic semiconductor with the highest Curie temperature

AU - Miyazaki, H.

AU - Im, H. J.

AU - Terashima, K.

AU - Yagi, S.

AU - Kato, M.

AU - Soda, K.

AU - Ito, T.

AU - Kimura, S.

N1 - Funding Information: We would like to thank Professor T. Takeuchi for his experimental support of EDX measurement and technical staff members of the Institute for Molecular Science and of the UVSOR Facility for their devoted support. This work was partly supported by a Grant-in-Aid for Young Scientists (Start-up) (Grant No. 21840057) from MEXT of Japan.

PY - 2010

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AB - We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC.

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