La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki, H. J. Im, K. Terashima, S. Yagi, M. Kato, K. Soda, T. Ito, S. Kimura

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Abstract

We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC.

Original languageEnglish
Article number232503
JournalApplied Physics Letters
Volume96
Issue number23
DOIs
Publication statusPublished - Jun 18 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Miyazaki, H., Im, H. J., Terashima, K., Yagi, S., Kato, M., Soda, K., Ito, T., & Kimura, S. (2010). La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature. Applied Physics Letters, 96(23), [232503]. https://doi.org/10.1063/1.3416911