Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12

P. A. Rayjada, A. Chainani, M. Matsunami, M. Taguchi, S. Tsuda, Takayoshi Yokoya, S. Shin, H. Sugawara, H. Sato

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

CeOs4Sb12 and CeFe4P12 are classified as Kondo semiconductors, which show coupled changes in electrical transport, thermodynamic and magnetic properties with a low-temperature semiconductor-like electrical resistivity. We have carried out core level and valence band photoemission spectroscopy on single crystal CeOs 4Sb12 and CeFe4P12 to study their electronic structure and the evolution of states at the Fermi level as a function of temperature (∼10-300K). The Ce3d core level spectra show the presence of f0, f1 and f2 final states with very different relative intensities in the two compounds. Single-impurity Anderson model calculations provide f electron counts of nf = 0.97 and 0.86 per Ce atom, suggestive of a low-and high-TK (= single ion Kondo temperature) for CeOs4Sb12 and CeFe 4P12, respectively. The high-resolution temperature-dependent near-Fermi level spectra show pseudogaps of energy ∼ 50meV and ∼ 110meV in the valence band density of states(DOS) of CeOs 4Sb12 and CeFe4P12, respectively. The temperature dependence of the DOS at the Fermi level follows the change in effective magnetic moment estimated from magnetic susceptibility for both materials, confirming the Kondo nature of the pseudogap in CeOs 4Sb12 and CeFe4P12. A compilation of measured pseudogaps using photoemission and optical spectroscopy identifies the charge gaps ΔC for Ce-based Kondo semiconductors and provides a direct relation with TK given by ΔC ∼ 2k BTK. In conjunction with the known behaviour of the spin gaps ΔS ∼ kBTK, the results establish the coupled energy scaling of the spin and charge gaps in Kondo semiconductors.

Original languageEnglish
Article number095502
JournalJournal of Physics Condensed Matter
Volume22
Issue number9
DOIs
Publication statusPublished - 2010
Externally publishedYes

Fingerprint

scaling
Fermi level
Semiconductor materials
Core levels
Photoelectron spectroscopy
Valence bands
photoelectric emission
Temperature
valence
Magnetic moments
Magnetic susceptibility
Transport properties
spectroscopy
Electronic structure
temperature
Magnetic properties
Thermodynamic properties
thermodynamic properties
magnetic moments
transport properties

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Rayjada, P. A., Chainani, A., Matsunami, M., Taguchi, M., Tsuda, S., Yokoya, T., ... Sato, H. (2010). Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12. Journal of Physics Condensed Matter, 22(9), [095502]. https://doi.org/10.1088/0953-8984/22/9/095502

Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12. / Rayjada, P. A.; Chainani, A.; Matsunami, M.; Taguchi, M.; Tsuda, S.; Yokoya, Takayoshi; Shin, S.; Sugawara, H.; Sato, H.

In: Journal of Physics Condensed Matter, Vol. 22, No. 9, 095502, 2010.

Research output: Contribution to journalArticle

Rayjada, PA, Chainani, A, Matsunami, M, Taguchi, M, Tsuda, S, Yokoya, T, Shin, S, Sugawara, H & Sato, H 2010, 'Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12', Journal of Physics Condensed Matter, vol. 22, no. 9, 095502. https://doi.org/10.1088/0953-8984/22/9/095502
Rayjada, P. A. ; Chainani, A. ; Matsunami, M. ; Taguchi, M. ; Tsuda, S. ; Yokoya, Takayoshi ; Shin, S. ; Sugawara, H. ; Sato, H. / Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12. In: Journal of Physics Condensed Matter. 2010 ; Vol. 22, No. 9.
@article{0ed665190d48479a84f86a38b28e520b,
title = "Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12",
abstract = "CeOs4Sb12 and CeFe4P12 are classified as Kondo semiconductors, which show coupled changes in electrical transport, thermodynamic and magnetic properties with a low-temperature semiconductor-like electrical resistivity. We have carried out core level and valence band photoemission spectroscopy on single crystal CeOs 4Sb12 and CeFe4P12 to study their electronic structure and the evolution of states at the Fermi level as a function of temperature (∼10-300K). The Ce3d core level spectra show the presence of f0, f1 and f2 final states with very different relative intensities in the two compounds. Single-impurity Anderson model calculations provide f electron counts of nf = 0.97 and 0.86 per Ce atom, suggestive of a low-and high-TK (= single ion Kondo temperature) for CeOs4Sb12 and CeFe 4P12, respectively. The high-resolution temperature-dependent near-Fermi level spectra show pseudogaps of energy ∼ 50meV and ∼ 110meV in the valence band density of states(DOS) of CeOs 4Sb12 and CeFe4P12, respectively. The temperature dependence of the DOS at the Fermi level follows the change in effective magnetic moment estimated from magnetic susceptibility for both materials, confirming the Kondo nature of the pseudogap in CeOs 4Sb12 and CeFe4P12. A compilation of measured pseudogaps using photoemission and optical spectroscopy identifies the charge gaps ΔC for Ce-based Kondo semiconductors and provides a direct relation with TK given by ΔC ∼ 2k BTK. In conjunction with the known behaviour of the spin gaps ΔS ∼ kBTK, the results establish the coupled energy scaling of the spin and charge gaps in Kondo semiconductors.",
author = "Rayjada, {P. A.} and A. Chainani and M. Matsunami and M. Taguchi and S. Tsuda and Takayoshi Yokoya and S. Shin and H. Sugawara and H. Sato",
year = "2010",
doi = "10.1088/0953-8984/22/9/095502",
language = "English",
volume = "22",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "9",

}

TY - JOUR

T1 - Kondo scaling of the pseudogap in CeOs4Sb12 and CeFe4P12

AU - Rayjada, P. A.

AU - Chainani, A.

AU - Matsunami, M.

AU - Taguchi, M.

AU - Tsuda, S.

AU - Yokoya, Takayoshi

AU - Shin, S.

AU - Sugawara, H.

AU - Sato, H.

PY - 2010

Y1 - 2010

N2 - CeOs4Sb12 and CeFe4P12 are classified as Kondo semiconductors, which show coupled changes in electrical transport, thermodynamic and magnetic properties with a low-temperature semiconductor-like electrical resistivity. We have carried out core level and valence band photoemission spectroscopy on single crystal CeOs 4Sb12 and CeFe4P12 to study their electronic structure and the evolution of states at the Fermi level as a function of temperature (∼10-300K). The Ce3d core level spectra show the presence of f0, f1 and f2 final states with very different relative intensities in the two compounds. Single-impurity Anderson model calculations provide f electron counts of nf = 0.97 and 0.86 per Ce atom, suggestive of a low-and high-TK (= single ion Kondo temperature) for CeOs4Sb12 and CeFe 4P12, respectively. The high-resolution temperature-dependent near-Fermi level spectra show pseudogaps of energy ∼ 50meV and ∼ 110meV in the valence band density of states(DOS) of CeOs 4Sb12 and CeFe4P12, respectively. The temperature dependence of the DOS at the Fermi level follows the change in effective magnetic moment estimated from magnetic susceptibility for both materials, confirming the Kondo nature of the pseudogap in CeOs 4Sb12 and CeFe4P12. A compilation of measured pseudogaps using photoemission and optical spectroscopy identifies the charge gaps ΔC for Ce-based Kondo semiconductors and provides a direct relation with TK given by ΔC ∼ 2k BTK. In conjunction with the known behaviour of the spin gaps ΔS ∼ kBTK, the results establish the coupled energy scaling of the spin and charge gaps in Kondo semiconductors.

AB - CeOs4Sb12 and CeFe4P12 are classified as Kondo semiconductors, which show coupled changes in electrical transport, thermodynamic and magnetic properties with a low-temperature semiconductor-like electrical resistivity. We have carried out core level and valence band photoemission spectroscopy on single crystal CeOs 4Sb12 and CeFe4P12 to study their electronic structure and the evolution of states at the Fermi level as a function of temperature (∼10-300K). The Ce3d core level spectra show the presence of f0, f1 and f2 final states with very different relative intensities in the two compounds. Single-impurity Anderson model calculations provide f electron counts of nf = 0.97 and 0.86 per Ce atom, suggestive of a low-and high-TK (= single ion Kondo temperature) for CeOs4Sb12 and CeFe 4P12, respectively. The high-resolution temperature-dependent near-Fermi level spectra show pseudogaps of energy ∼ 50meV and ∼ 110meV in the valence band density of states(DOS) of CeOs 4Sb12 and CeFe4P12, respectively. The temperature dependence of the DOS at the Fermi level follows the change in effective magnetic moment estimated from magnetic susceptibility for both materials, confirming the Kondo nature of the pseudogap in CeOs 4Sb12 and CeFe4P12. A compilation of measured pseudogaps using photoemission and optical spectroscopy identifies the charge gaps ΔC for Ce-based Kondo semiconductors and provides a direct relation with TK given by ΔC ∼ 2k BTK. In conjunction with the known behaviour of the spin gaps ΔS ∼ kBTK, the results establish the coupled energy scaling of the spin and charge gaps in Kondo semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=77149172826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77149172826&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/22/9/095502

DO - 10.1088/0953-8984/22/9/095502

M3 - Article

C2 - 21389417

AN - SCOPUS:77149172826

VL - 22

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 9

M1 - 095502

ER -