Abstract
We have found, by deep-level transient spectroscopy (DLTS), that the dissociation rate of a deuterium-carbon complex in silicon is about half that of a hydrogen-carbon complex, while the activation energies for the dissociation of both the complexes are the same. This clearly proves that both the complexes have the same atomic configuration and their dissociation is governed by the atomic jump of hydrogen (deuterium).
Original language | English |
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Pages (from-to) | 1098-1099 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 3 A |
DOIs | |
Publication status | Published - 2000 |
Keywords
- Carbon
- DLTS
- Defect
- Dissociation
- Hydrogen
- Si
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)