ISFET INCORPORATED IN A DIFFERENTIAL AMPLIFIER.

Keiji Tsukada, Takuya Maruizumi, Hiroyuki Miyagi

Research output: Contribution to journalArticle

Abstract

The output of the ISFET (Ion Sensitive Field Effect Transistor) was obtained as a voltage signal. To achieve the temperature compensation, a differential amplifier composed of an ISFET and a MOSFET was fabricated. Polycrystalline silicon was used for the connection between the devices and the MOSFET gate electrode. The entire device surface was covered with Si//3N//4/SiO//2 to ensure the waterproof properties of the device. As a result, the MOSFET could be located near the ISFET and both FETs could be processed in the same manner. The fabricated ISFET produced the voltage signal in accordance with the change in its gate membrane potential. The sensitivity of the device ws 49 mV/pH. Temperature compensation in the ISFET was achieved with a temperature coefficient minus 0. 8 mV/ degree C.

Original languageEnglish
Pages (from-to)82-88
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume71
Issue number3
Publication statusPublished - Mar 1988
Externally publishedYes

Fingerprint

differential amplifiers
Ion sensitive field effect transistors
Differential amplifiers
field effect transistors
ions
temperature compensation
Electric potential
Field effect transistors
Polysilicon
Temperature
Membranes
Electrodes
electric potential
membranes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

ISFET INCORPORATED IN A DIFFERENTIAL AMPLIFIER. / Tsukada, Keiji; Maruizumi, Takuya; Miyagi, Hiroyuki.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 71, No. 3, 03.1988, p. 82-88.

Research output: Contribution to journalArticle

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