Integrated atomic force microscopy/scanning tunneling spectroscopy microscope and its application for p-n junction observations

Kenji Yamazaki, Shigeru Nakajima

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have developed an integrated atomic force microscopy. (AFM)/scanning tunneling spectroscopy (STS) microscope that can simultaneously obtain, for the same area, a topographic image and current imaging tunneling spectroscopy (CITS) images derived from current-voltage (I-V) characteristics on insulator-mixed surfaces. The I-V characteristics and CITS images of p-n junctions are stable and clearly show the differences between p --and n +-regions, and thus these regions can easily be distinguished. The characteristics can be explained by theoretical energy-band analysis. Since the current decreases with time after HF cleaning, the current changes are also probably related to changes in native oxide thickness. Studies of impurity concentration distribution and oxide growth on silicon surfaces are found to be possible by integrated AFM/STS microscopy.

Original languageEnglish
Pages (from-to)3743-3747
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number6 B
Publication statusPublished - Jun 1994
Externally publishedYes

Fingerprint

p-n junctions
Atomic force microscopy
Microscopes
microscopes
atomic force microscopy
Spectroscopy
Scanning
scanning
spectroscopy
Imaging techniques
Oxides
Band structure
oxides
Cleaning
Microscopic examination
cleaning
energy bands
Impurities
Silicon
insulators

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have developed an integrated atomic force microscopy. (AFM)/scanning tunneling spectroscopy (STS) microscope that can simultaneously obtain, for the same area, a topographic image and current imaging tunneling spectroscopy (CITS) images derived from current-voltage (I-V) characteristics on insulator-mixed surfaces. The I-V characteristics and CITS images of p-n junctions are stable and clearly show the differences between p --and n +-regions, and thus these regions can easily be distinguished. The characteristics can be explained by theoretical energy-band analysis. Since the current decreases with time after HF cleaning, the current changes are also probably related to changes in native oxide thickness. Studies of impurity concentration distribution and oxide growth on silicon surfaces are found to be possible by integrated AFM/STS microscopy.",
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