InP/InGaAs heterojunction phototransistor operating at wavelengths above 2 μm realized using strained InAs/InGaAs multiquantum well absorption layer

Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiroshi Yasaka

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1 Citation (Scopus)

Abstract

A new infrared photodetector has been developed that provides a high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer. The insertion of a thick strained InAs well into the low electric field region of the collector makes it possible to maintain a large excitonic effect, and a high absorption coefficient is obtained even at a wavelength as long as 2.3μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

Original languageEnglish
Pages (from-to)7909-7914
Number of pages6
JournalJapanese Journal of Applied Physics
Volume47
Issue number10 PART 1
DOIs
Publication statusPublished - Oct 1 2008

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Keywords

  • HPT
  • Heterojunction phototransistor
  • High responsivity
  • InAs/InGaAs
  • Infrared photodetector

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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