TY - JOUR
T1 - InGaAsp/inp hetero junction bipolar transistor with high current gain
AU - Fukano, Hideki
AU - Itaya, Yoshio
AU - Motosugi, George
PY - 1986/6
Y1 - 1986/6
N2 - N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT’s) were fabricated. It has been shown that a maximum current gain of more than 10, 000 is obtained with a base carrier concentration of 5 X 1017 cm-3 and a 0.15 jum base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-generation current in the emitter-base depletion region.
AB - N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT’s) were fabricated. It has been shown that a maximum current gain of more than 10, 000 is obtained with a base carrier concentration of 5 X 1017 cm-3 and a 0.15 jum base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-generation current in the emitter-base depletion region.
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U2 - 10.1143/JJAP.25.L504
DO - 10.1143/JJAP.25.L504
M3 - Article
AN - SCOPUS:0022734189
SN - 0021-4922
VL - 25
SP - L504-L506
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
ER -