InGaAsp/inp hetero junction bipolar transistor with high current gain

Hideki Fukano, Yoshio Itaya, George Motosugi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT’s) were fabricated. It has been shown that a maximum current gain of more than 10, 000 is obtained with a base carrier concentration of 5 X 1017 cm-3 and a 0.15 jum base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-generation current in the emitter-base depletion region.

Original languageEnglish
Pages (from-to)L504-L506
JournalJapanese Journal of Applied Physics
Volume25
Issue number6
DOIs
Publication statusPublished - Jun 1986
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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