N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT’s) were fabricated. It has been shown that a maximum current gain of more than 10, 000 is obtained with a base carrier concentration of 5 X 1017 cm-3 and a 0.15 jum base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-generation current in the emitter-base depletion region.
ASJC Scopus subject areas
- Physics and Astronomy(all)