InGaAsP/InP HETERO JUNCTION BIPOLAR TRANSISTOR WITH HIGH CURRENT GAIN.

Hideki Fukano, Yoshio Itaya, George Motosugi

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT's) were fabricated. It has been show that a maximum current gain of more than 10,000 is obtained with a base carrier concentration of 5 multiplied by 10**1**7 cm** minus **3 and a 0. 15 mu m base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-gneration current in the emitter-base depletion region.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages504-506
Number of pages3
Volume25
Edition6
Publication statusPublished - Jun 1986
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fukano, H., Itaya, Y., & Motosugi, G. (1986). InGaAsP/InP HETERO JUNCTION BIPOLAR TRANSISTOR WITH HIGH CURRENT GAIN. In Japanese Journal of Applied Physics, Part 2: Letters (6 ed., Vol. 25, pp. 504-506)