Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

Original languageEnglish
Pages (from-to)2869-2873
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - Nov 2003
Externally publishedYes

Fingerprint

Single electron transistors
silicon transistors
single electron transistors
Silicon
Oxidation
oxidation
Coulomb blockade
Nanolithography
Temperature
temperature
nanowires
roughness
etching
electron beams
Nanowires
Electron beams
Etching
oscillations
Surface roughness
room temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Namatsu, H., Watanabe, Y., Yamazaki, K., Yamaguchi, T., Nagase, M., Ono, Y., ... Horiguchi, S. (2003). Influence of oxidation temperature on Si-single electron transistor characteristics. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), 2869-2873.

Influence of oxidation temperature on Si-single electron transistor characteristics. / Namatsu, H.; Watanabe, Y.; Yamazaki, K.; Yamaguchi, T.; Nagase, M.; Ono, Y.; Fujiwara, A.; Horiguchi, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2869-2873.

Research output: Contribution to journalArticle

Namatsu, H, Watanabe, Y, Yamazaki, K, Yamaguchi, T, Nagase, M, Ono, Y, Fujiwara, A & Horiguchi, S 2003, 'Influence of oxidation temperature on Si-single electron transistor characteristics', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 6, pp. 2869-2873.
Namatsu, H. ; Watanabe, Y. ; Yamazaki, K. ; Yamaguchi, T. ; Nagase, M. ; Ono, Y. ; Fujiwara, A. ; Horiguchi, S. / Influence of oxidation temperature on Si-single electron transistor characteristics. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 6. pp. 2869-2873.
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