Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu; Y. Watanabe; K. Yamazaki; T. Yamaguchi; M. Nagase; Y. Ono; A. Fujiwara; S. Horiguchi

doi:10.1116/1.1629297

Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

Original language	English
Pages (from-to)	2869-2873
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1629297
Publication status	Published - 2003

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{493d7c873d7d4e73a887904a9e15002f,

title = "Influence of oxidation temperature on Si-single electron transistor characteristics",

abstract = "The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.",

author = "H. Namatsu and Y. Watanabe and K. Yamazaki and T. Yamaguchi and M. Nagase and Y. Ono and A. Fujiwara and S. Horiguchi",

year = "2003",

doi = "10.1116/1.1629297",

language = "English",

volume = "21",

pages = "2869--2873",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Influence of oxidation temperature on Si-single electron transistor characteristics

AU - Namatsu, H.

AU - Watanabe, Y.

AU - Yamazaki, K.

AU - Yamaguchi, T.

AU - Nagase, M.

AU - Ono, Y.

AU - Fujiwara, A.

AU - Horiguchi, S.

PY - 2003

Y1 - 2003

N2 - The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

AB - The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

UR - http://www.scopus.com/inward/record.url?scp=0942267529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942267529&partnerID=8YFLogxK

U2 - 10.1116/1.1629297

DO - 10.1116/1.1629297

M3 - Article

AN - SCOPUS:0942267529

VL - 21

SP - 2869

EP - 2873

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

ER -

Influence of oxidation temperature on Si-single electron transistor characteristics

Abstract

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