Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu; Y. Watanabe; K. Yamazaki; T. Yamaguchi; M. Nagase; Y. Ono; A. Fujiwara; S. Horiguchi

Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

Faculty of Engineering

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

Original language	English
Pages (from-to)	2869-2873
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
Publication status	Published - Nov 1 2003

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Influence of oxidation temperature on Si-single electron transistor characteristics. / Namatsu, H.; Watanabe, Y.; Yamazaki, K.; Yamaguchi, T.; Nagase, M.; Ono, Y.; Fujiwara, A.; Horiguchi, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 2869-2873.

Research output: Contribution to journal › Article

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AU - Fujiwara, A.

AU - Horiguchi, S.

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