Abstract
The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.
| Original language | English |
|---|---|
| Pages (from-to) | 2869-2873 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 6 |
| Publication status | Published - Nov 2003 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Influence of oxidation temperature on Si-single electron transistor characteristics. / Namatsu, H.; Watanabe, Y.; Yamazaki, K.; Yamaguchi, T.; Nagase, M.; Ono, Y.; Fujiwara, A.; Horiguchi, S.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2869-2873.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of oxidation temperature on Si-single electron transistor characteristics
AU - Namatsu, H.
AU - Watanabe, Y.
AU - Yamazaki, K.
AU - Yamaguchi, T.
AU - Nagase, M.
AU - Ono, Y.
AU - Fujiwara, A.
AU - Horiguchi, S.
PY - 2003/11
Y1 - 2003/11
N2 - The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.
AB - The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.
UR - http://www.scopus.com/inward/record.url?scp=0942267529&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0942267529&partnerID=8YFLogxK
M3 - Article
VL - 21
SP - 2869
EP - 2873
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 6
ER -