Abstract
The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.
| Original language | English |
|---|---|
| Pages (from-to) | 2869-2873 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 6 |
| Publication status | Published - Nov 1 2003 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Namatsu, H., Watanabe, Y., Yamazaki, K., Yamaguchi, T., Nagase, M., Ono, Y., Fujiwara, A., & Horiguchi, S. (2003). Influence of oxidation temperature on Si-single electron transistor characteristics. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), 2869-2873.