Influence of oxidation temperature on Si-single electron transistor characteristics

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

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Abstract

The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.

Original languageEnglish
Pages (from-to)2869-2873
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - Nov 1 2003

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Namatsu, H., Watanabe, Y., Yamazaki, K., Yamaguchi, T., Nagase, M., Ono, Y., Fujiwara, A., & Horiguchi, S. (2003). Influence of oxidation temperature on Si-single electron transistor characteristics. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), 2869-2873.