Abstract
We investigate the electronic structure of high-quality single-crystal LaNiO3(LNO) thin films using in situ photoemission spectroscopy (PES) in order to reveal the intrinsic electronic structure of LNO. The O 1s X-ray absorption (XAS) spectrum, which have much deeper probing depth than that of PES measurement, is in good agreement with previous studies on polycrystalline LNO surfaces. The in situ valence band PES spectrum shows well-resolved Ni 3d-derived t2g and eg features, while earlier X-ray photoemission studies on polycrystals showed a single band peak. The narrow eg-derived feature exhibits enhanced intensity compared to local density approximation band structure calculations. The results are consistent with a renormalization of electronic states at EF, in terms of the known enhanced effective mass.
| Original language | English |
|---|---|
| Pages (from-to) | 107-110 |
| Number of pages | 4 |
| Journal | Journal of Electron Spectroscopy and Related Phenomena |
| Volume | 156-158 |
| DOIs | |
| Publication status | Published - May 2007 |
| Externally published | Yes |
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Keywords
- In situ photoemission spectroscopy
- LaNiO thin film
- Pulsed laser deposition
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Spectroscopy
- Atomic and Molecular Physics, and Optics
- Surfaces and Interfaces
Cite this
In situ photoemission study of LaNiO3 thin films grown by pulsed laser deposition. / Horiba, K.; Eguchi, Ritsuko; Taguchi, M.; Chainani, A.; Kikkawa, A.; Senba, Y.; Ohashi, H.; Shin, S.
In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 156-158, 05.2007, p. 107-110.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In situ photoemission study of LaNiO3 thin films grown by pulsed laser deposition
AU - Horiba, K.
AU - Eguchi, Ritsuko
AU - Taguchi, M.
AU - Chainani, A.
AU - Kikkawa, A.
AU - Senba, Y.
AU - Ohashi, H.
AU - Shin, S.
PY - 2007/5
Y1 - 2007/5
N2 - We investigate the electronic structure of high-quality single-crystal LaNiO3(LNO) thin films using in situ photoemission spectroscopy (PES) in order to reveal the intrinsic electronic structure of LNO. The O 1s X-ray absorption (XAS) spectrum, which have much deeper probing depth than that of PES measurement, is in good agreement with previous studies on polycrystalline LNO surfaces. The in situ valence band PES spectrum shows well-resolved Ni 3d-derived t2g and eg features, while earlier X-ray photoemission studies on polycrystals showed a single band peak. The narrow eg-derived feature exhibits enhanced intensity compared to local density approximation band structure calculations. The results are consistent with a renormalization of electronic states at EF, in terms of the known enhanced effective mass.
AB - We investigate the electronic structure of high-quality single-crystal LaNiO3(LNO) thin films using in situ photoemission spectroscopy (PES) in order to reveal the intrinsic electronic structure of LNO. The O 1s X-ray absorption (XAS) spectrum, which have much deeper probing depth than that of PES measurement, is in good agreement with previous studies on polycrystalline LNO surfaces. The in situ valence band PES spectrum shows well-resolved Ni 3d-derived t2g and eg features, while earlier X-ray photoemission studies on polycrystals showed a single band peak. The narrow eg-derived feature exhibits enhanced intensity compared to local density approximation band structure calculations. The results are consistent with a renormalization of electronic states at EF, in terms of the known enhanced effective mass.
KW - In situ photoemission spectroscopy
KW - LaNiO thin film
KW - Pulsed laser deposition
UR - http://www.scopus.com/inward/record.url?scp=34247124676&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247124676&partnerID=8YFLogxK
U2 - 10.1016/j.elspec.2006.12.048
DO - 10.1016/j.elspec.2006.12.048
M3 - Article
AN - SCOPUS:34247124676
VL - 156-158
SP - 107
EP - 110
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
SN - 0368-2048
ER -