Abstract
In situ monitoring of indentation cracking in dielectric ceramics was examined by introducing a semiconducting region in the surface of the ceramics. Titanium dioxide was employed as the dielectric ceramic. The monitoring sensitivity can be enhanced by controlling the thickness of the conducting layer.
| Original language | English |
|---|---|
| Pages (from-to) | 221-223 |
| Number of pages | 3 |
| Journal | Journal of Materials Science Letters |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)