In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

Nobuko Fukuda, Yuichi Watanabe, Sei Uemura, Yuji Yoshida, Takashi Nakamura, Hirobumi Ushijima

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Indium-gallium-zinc oxide (IGZO) nanoparticles that can act as an oxide semiconductor were successfully synthesized using a coprecipitation method via the hydrolysis of urea in aqueous media containing ethylene glycol. The resulting IGZO precursor nanoparticles contain crystalline indium hydroxide and zinc-gallium carbonate. Sintering the precursor nanoparticles at temperatures higher than 300 °C provides amorphous IGZO nanoparticles, while poly-crystalline IGZO nanoparticles are obtained at temperatures above 700 °C. Poly-crystalline IGZO ink was prepared using the IGZO nanoparticles for the fabrication of a thin film transistor (TFT). Annealing at temperatures higher than 400 °C for 30 min gives the desired TFT switching properties due to the removal of the organic fraction contained in the ink.

Original languageEnglish
Pages (from-to)2448-2454
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number13
DOIs
Publication statusPublished - Apr 7 2014
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method'. Together they form a unique fingerprint.

Cite this