Improving the Characteristics of InAIAs/lnGaAs Heterojunction Bipolar Transistors by Employing Thin Base and Collector Layers

H. Fukano; Y. Kawamura; H. Asai; Y. Takanashi; M. Fujimoto

doi:10.1049/el:19900712

Improving the Characteristics of InAIAs/lnGaAs Heterojunction Bipolar Transistors by Employing Thin Base and Collector Layers

H. Fukano, Y. Kawamura, H. Asai, Y. Takanashi, M. Fujimoto

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

InAIAs/lnGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.

Original language	English
Pages (from-to)	1101-1102
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	15
DOIs	https://doi.org/10.1049/el:19900712
Publication status	Published - Sep 1 1990
Externally published	Yes

Keywords

Bipolar devices
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900712

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abstract = "InAIAs/lnGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.",

keywords = "Bipolar devices, Semiconductor devices and materials",

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T1 - Improving the Characteristics of InAIAs/lnGaAs Heterojunction Bipolar Transistors by Employing Thin Base and Collector Layers

AU - Fukano, H.

AU - Kawamura, Y.

AU - Asai, H.

AU - Takanashi, Y.

AU - Fujimoto, M.

PY - 1990/9/1

Y1 - 1990/9/1

N2 - InAIAs/lnGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.

AB - InAIAs/lnGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.

KW - Bipolar devices

KW - Semiconductor devices and materials

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M3 - Article

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JF - Electronics Letters

SN - 0013-5194

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ER -

Improving the Characteristics of InAIAs/lnGaAs Heterojunction Bipolar Transistors by Employing Thin Base and Collector Layers

Abstract

Keywords

ASJC Scopus subject areas

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