Improving the Characteristics of InAIAs/lnGaAs Heterojunction Bipolar Transistors by Employing Thin Base and Collector Layers

H. Fukano, Y. Kawamura, H. Asai, Y. Takanashi, M. Fujimoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

InAIAs/lnGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.

Original languageEnglish
Pages (from-to)1101-1102
Number of pages2
JournalElectronics Letters
Volume26
Issue number15
DOIs
Publication statusPublished - Sep 1 1990
Externally publishedYes

Keywords

  • Bipolar devices
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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