Improvement of radiation-hardness of double-sided silicon strip detector for Belle SVD upgrade

J. Kaneko, H. Aihara, G. Alimonti, M. Hazumi, H. Ishino, Y. Li, K. Sumisawa, H. Tajima, J. Tanaka, G. Taylor, H. Yamamoto, M. Yokoyama, G. Varner

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

We have developed a double-sided silicon strip detector (DSSD) for the Belle Silicon Vertex Detector (SVD) upgrade. Since a radiation-hard front-end LSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 °C to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end LSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 MRad.

Original languageEnglish
Pages3/127-3/131
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France
Duration: Oct 15 2000Oct 20 2000

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
CountryFrance
CityLyon
Period10/15/0010/20/00

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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