Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

J. Kaneko, H. Aihara, G. Alimonti, M. Hazumi, H. Ishino, Y. Li, K. Sumisawa, H. Tajima, J. Tanaka, G. Taylor, H. Yamamoto, M. Yokoyama, G. Varner

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

Original languageEnglish
Pages (from-to)1593-1597
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number4
DOIs
Publication statusPublished - Aug 2002
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Kaneko, J., Aihara, H., Alimonti, G., Hazumi, M., Ishino, H., Li, Y., Sumisawa, K., Tajima, H., Tanaka, J., Taylor, G., Yamamoto, H., Yokoyama, M., & Varner, G. (2002). Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade. IEEE Transactions on Nuclear Science, 49 I(4), 1593-1597. https://doi.org/10.1109/TNS.2002.801694