Abstract
We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).
Original language | English |
---|---|
Pages (from-to) | 1593-1597 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 49 I |
Issue number | 4 |
DOIs | |
Publication status | Published - Aug 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering