Abstract
We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).
| Original language | English |
|---|---|
| Pages (from-to) | 1593-1597 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 49 I |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Aug 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering
Cite this
Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade. / Kaneko, J.; Aihara, H.; Alimonti, G.; Hazumi, M.; Ishino, Hirokazu; Li, Y.; Sumisawa, K.; Tajima, H.; Tanaka, J.; Taylor, G.; Yamamoto, H.; Yokoyama, M.; Varner, G.
In: IEEE Transactions on Nuclear Science, Vol. 49 I, No. 4, 08.2002, p. 1593-1597.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade
AU - Kaneko, J.
AU - Aihara, H.
AU - Alimonti, G.
AU - Hazumi, M.
AU - Ishino, Hirokazu
AU - Li, Y.
AU - Sumisawa, K.
AU - Tajima, H.
AU - Tanaka, J.
AU - Taylor, G.
AU - Yamamoto, H.
AU - Yokoyama, M.
AU - Varner, G.
PY - 2002/8
Y1 - 2002/8
N2 - We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).
AB - We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).
UR - http://www.scopus.com/inward/record.url?scp=0036703254&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036703254&partnerID=8YFLogxK
U2 - 10.1109/TNS.2002.801694
DO - 10.1109/TNS.2002.801694
M3 - Article
AN - SCOPUS:0036703254
VL - 49 I
SP - 1593
EP - 1597
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 4
ER -