Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

J. Kaneko; H. Aihara; G. Alimonti; M. Hazumi; H. Ishino; Y. Li; K. Sumisawa; H. Tajima; J. Tanaka; G. Taylor; H. Yamamoto; M. Yokoyama; G. Varner

doi:10.1109/TNS.2002.801694

Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

J. Kaneko, H. Aihara, G. Alimonti, M. Hazumi, H. Ishino, Y. Li, K. Sumisawa, H. Tajima, J. Tanaka, G. Taylor, H. Yamamoto, M. Yokoyama, G. Varner

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after ⁶⁰Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

Original language	English
Pages (from-to)	1593-1597
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	49 I
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2002.801694
Publication status	Published - Aug 1 2002
Externally published	Yes

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ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

Kaneko, J., Aihara, H., Alimonti, G., Hazumi, M., Ishino, H., Li, Y., Sumisawa, K., Tajima, H., Tanaka, J., Taylor, G., Yamamoto, H., Yokoyama, M., & Varner, G. (2002). Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade. IEEE Transactions on Nuclear Science, 49 I(4), 1593-1597. https://doi.org/10.1109/TNS.2002.801694

Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade. / Kaneko, J.; Aihara, H.; Alimonti, G.; Hazumi, M.; Ishino, H.; Li, Y.; Sumisawa, K.; Tajima, H.; Tanaka, J.; Taylor, G.; Yamamoto, H.; Yokoyama, M.; Varner, G.

In: IEEE Transactions on Nuclear Science, Vol. 49 I, No. 4, 01.08.2002, p. 1593-1597.

Research output: Contribution to journal › Article

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abstract = "We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).",

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AU - Li, Y.

AU - Sumisawa, K.

AU - Tajima, H.

AU - Tanaka, J.

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AU - Yokoyama, M.

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AB - We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

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Access to Document

10.1109/TNS.2002.801694