Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

J. Kaneko; H. Aihara; G. Alimonti; M. Hazumi; H. Ishino; Y. Li; K. Sumisawa; H. Tajima; J. Tanaka; G. Taylor; H. Yamamoto; M. Yokoyama; G. Varner

doi:10.1109/TNS.2002.801694

Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

J. Kaneko, H. Aihara, G. Alimonti, M. Hazumi, H. Ishino, Y. Li, K. Sumisawa, H. Tajima, J. Tanaka, G. Taylor, H. Yamamoto, M. Yokoyama, G. Varner

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after ⁶⁰Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

Original language	English
Pages (from-to)	1593-1597
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	49 I
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2002.801694
Publication status	Published - Aug 2002
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2002.801694

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title = "Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade",

abstract = "We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).",

author = "J. Kaneko and H. Aihara and G. Alimonti and M. Hazumi and H. Ishino and Y. Li and K. Sumisawa and H. Tajima and J. Tanaka and G. Taylor and H. Yamamoto and M. Yokoyama and G. Varner",

note = "Funding Information: Manuscript received November 5, 2000; revised November 27, 2001. This work was supported in part by the Ministry of Education, Science, and Culture of Japan under a Grant-in-Aid for Scientific Research on Priority Areas. J. Kaneko and H. Ishino are with the Physics Department, Tokyo Institute of Technology, 152-8551 Tokyo, Japan (e-mail: kaneko@hp.phys.titech.ac.jp). H. Aihara, H. Tajima, J. Tanaka, and M. Yokoyama are with the Department of Physics, University of Tokyo, 113-0033 Tokyo, Japan. G. Alimonti, Y. Li, H. Yamamoto, and G. Varner are with the Physics Department, University of Hawaii, Honolulu, HI 96822 USA. M. Hazumi and K. Sumisawa are with the Department of Physics, Graduate School of Science, Osaka University, 560-0043 Osaka, Japan. G. Taylor is with the School of Physics, University of Melbourne, Parkville, 3502 Victoria, Australia. Digital Object Identifier 10.1109/TNS.2002.801694",

year = "2002",

month = aug,

doi = "10.1109/TNS.2002.801694",

language = "English",

volume = "49 I",

pages = "1593--1597",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

AU - Kaneko, J.

AU - Aihara, H.

AU - Alimonti, G.

AU - Hazumi, M.

AU - Ishino, H.

AU - Li, Y.

AU - Sumisawa, K.

AU - Tajima, H.

AU - Tanaka, J.

AU - Taylor, G.

AU - Yamamoto, H.

AU - Yokoyama, M.

AU - Varner, G.

N1 - Funding Information: Manuscript received November 5, 2000; revised November 27, 2001. This work was supported in part by the Ministry of Education, Science, and Culture of Japan under a Grant-in-Aid for Scientific Research on Priority Areas. J. Kaneko and H. Ishino are with the Physics Department, Tokyo Institute of Technology, 152-8551 Tokyo, Japan (e-mail: kaneko@hp.phys.titech.ac.jp). H. Aihara, H. Tajima, J. Tanaka, and M. Yokoyama are with the Department of Physics, University of Tokyo, 113-0033 Tokyo, Japan. G. Alimonti, Y. Li, H. Yamamoto, and G. Varner are with the Physics Department, University of Hawaii, Honolulu, HI 96822 USA. M. Hazumi and K. Sumisawa are with the Department of Physics, Graduate School of Science, Osaka University, 560-0043 Osaka, Japan. G. Taylor is with the School of Physics, University of Melbourne, Parkville, 3502 Victoria, Australia. Digital Object Identifier 10.1109/TNS.2002.801694

PY - 2002/8

Y1 - 2002/8

N2 - We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

AB - We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after 60Co gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

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DO - 10.1109/TNS.2002.801694

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SP - 1593

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

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ER -

Improvement of radiation hardness of double-sided silicon strip detector for belle SVD upgrade

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