Abstract
Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.
| Original language | English |
|---|---|
| Pages (from-to) | 721-724 |
| Number of pages | 4 |
| Journal | Journal of the Ceramic Society of Japan |
| Volume | 124 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 1 2016 |
| Externally published | Yes |
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Keywords
- Buffer layer
- CeO-ZrO solid solution
- Epitaxial growth
- PLD
- Si substrate
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
Cite this
Improvement of crystallinity and surface roughness in epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 buffer layers deposited on a Si(100) substrate by pulsed laser deposition. / Aihara, Wataru; Shiota, Tadashi; Sakurai, Osamu; Shinozaki, Kazuo.
In: Journal of the Ceramic Society of Japan, Vol. 124, No. 6, 01.06.2016, p. 721-724.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Improvement of crystallinity and surface roughness in epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 buffer layers deposited on a Si(100) substrate by pulsed laser deposition
AU - Aihara, Wataru
AU - Shiota, Tadashi
AU - Sakurai, Osamu
AU - Shinozaki, Kazuo
PY - 2016/6/1
Y1 - 2016/6/1
N2 - Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.
AB - Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.
KW - Buffer layer
KW - CeO-ZrO solid solution
KW - Epitaxial growth
KW - PLD
KW - Si substrate
UR - http://www.scopus.com/inward/record.url?scp=84971667956&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971667956&partnerID=8YFLogxK
U2 - 10.2109/jcersj2.15243
DO - 10.2109/jcersj2.15243
M3 - Article
AN - SCOPUS:84971667956
VL - 124
SP - 721
EP - 724
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 6
ER -