Improvement of crystallinity and surface roughness in epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 buffer layers deposited on a Si(100) substrate by pulsed laser deposition

Wataru Aihara, Tadashi Shiota, Osamu Sakurai, Kazuo Shinozaki

Research output: Contribution to journalArticle

Abstract

Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.

Original languageEnglish
Pages (from-to)721-724
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume124
Issue number6
DOIs
Publication statusPublished - Jun 1 2016
Externally publishedYes

Fingerprint

Buffer layers
Pulsed laser deposition
yttria-stabilized zirconia
pulsed laser deposition
crystallinity
surface roughness
roughness
buffers
Surface roughness
Lattice constants
Substrates
Epitaxial films
Full width at half maximum
Crystal orientation
lattice parameters
curves

Keywords

  • Buffer layer
  • CeO-ZrO solid solution
  • Epitaxial growth
  • PLD
  • Si substrate

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{b8995131a21a4c0892160cd7ae0ff843,
title = "Improvement of crystallinity and surface roughness in epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 buffer layers deposited on a Si(100) substrate by pulsed laser deposition",
abstract = "Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.",
keywords = "Buffer layer, CeO-ZrO solid solution, Epitaxial growth, PLD, Si substrate",
author = "Wataru Aihara and Tadashi Shiota and Osamu Sakurai and Kazuo Shinozaki",
year = "2016",
month = "6",
day = "1",
doi = "10.2109/jcersj2.15243",
language = "English",
volume = "124",
pages = "721--724",
journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
issn = "1882-0743",
publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
number = "6",

}

TY - JOUR

T1 - Improvement of crystallinity and surface roughness in epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 buffer layers deposited on a Si(100) substrate by pulsed laser deposition

AU - Aihara, Wataru

AU - Shiota, Tadashi

AU - Sakurai, Osamu

AU - Shinozaki, Kazuo

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.

AB - Epitaxial CeO2/Ce1-xZrxO2/Y0.15Zr0.85O1.93 (YSZ) buffer layers were fabricated on a Si(100) substrate by pulsed laser deposition, and its crystallinity and surface roughness were analyzed. When Ce1-xZrxO2 (x = 00.6) films were directly deposited on the Si(100) substrate, the films had a (111) or (111)-preferred orientation. In contrast, (100)-oriented epitaxial films of the Ce1-xZrxO2(x = 00.6) were obtained by introducing a 2.5-nm-thick YSZ buffer layer between Ce1-xZrxO2 and Si. Lattice parameters and surface roughness of the Ce1-xZrxO2 layers on the YSZ-buffered Si(100) decreased from 0.542 to 0.525nm (in-plane) and 0.47 to 0.12 nm, respectively, as the increase of x from 0 to 0.6. After that, an epitaxial CeO2/Ce0.4Zr0.6O2/YSZ buffer layer was fabricated on the Si substrate. Differences in lattice parameters between CeO2 and Ce0.4Zr0.6O2 and also between Ce0.4Zr0.6O2 and YSZ became about half of that between CeO2 and YSZ. As a result, surface roughness of the CeO2 layer on top of the Ce0.4Zr0.6O2/YSZ/Si and full width at half maximum of the rocking curve of the CeO2 (004) reflection became 0.18nm and 0.89 degrees, respectively, which were smaller than those of CeO2 layers deposited directly on YSZ/Si.

KW - Buffer layer

KW - CeO-ZrO solid solution

KW - Epitaxial growth

KW - PLD

KW - Si substrate

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JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

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