Hydrogen response mechanism of a proton pumping gate FET gas sensor

Keiji Tsukada, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We developed a new type hydrogen sensor for a proton pumping gate FET with a triple layer of Pd / proton conducting polymer / Pt. Compared with conventional type FET with a single catalytic metal gate, the selectivity was improved. Furthermore, two different output signals of DC and AC modulation were obtained. According to increments of the upper gate voltage to a lower gate, the sensitivity was increased. When modulation voltage was added to the upper gate voltage, AC modulation output was obtained. The response mechanism of the new type FET was investigated using several hydrogen gases and with modulation conditions. Consequently, the hydrogen response mechanism can be explained by a hydrogen dissociation reaction occurring at the upper gate, and the hydrogen gas and generated proton can pass through the proton conducting polymer, and finally an equilibrium hydrogen reaction occurs at the lower gate. These complex mechanisms can be controlled by the gate bias and modulation voltage.

Original languageEnglish
Title of host publicationThe 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Pages1326-1329
Number of pages4
DOIs
Publication statusPublished - Dec 1 2007
Event6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States
Duration: Oct 28 2007Oct 31 2007

Publication series

NameProceedings of IEEE Sensors

Other

Other6th IEEE Conference on SENSORS, IEEE SENSORS 2007
CountryUnited States
CityAtlanta, GA
Period10/28/0710/31/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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