Hydrogen enhanced dislocation glides in silicon

Yoshifumi Yamashita, F. Jyobe, Y. Kamiura, K. Maeda

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We have studied the effects of irradiation of hydrogen plasma on the dislocation glide motion. The velocity of dislocation motion was remarkably enhanced by the irradiation in the temperature range below about 480 °C and the activation energy was reduced to 1.2 eV under hydrogen plasma from 2.2 eV in the hydrogen-free condition. We experimentally confirmed that this effect is owing neither to the light from the plasma nor to any defects induced by the irradiation but is due to the hydrogens incorporated into the sample. We also found that pre-hydrogenation treatments play an essential role for this effect to occur. The microscopic mechanism and implications of the experimental findings are discussed in the framework of the Peierls mechanism.

Original languageEnglish
Pages (from-to)27-34
Number of pages8
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
Publication statusPublished - 1999

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Silicon
Hydrogen
hydrogen plasma
irradiation
Irradiation
silicon
hydrogen
Plasmas
hydrogenation
activation energy
Hydrogenation
Activation energy
defects
Defects
temperature
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hydrogen enhanced dislocation glides in silicon. / Yamashita, Yoshifumi; Jyobe, F.; Kamiura, Y.; Maeda, K.

In: Physica Status Solidi (A) Applied Research, Vol. 171, No. 1, 1999, p. 27-34.

Research output: Contribution to journalArticle

Yamashita, Y, Jyobe, F, Kamiura, Y & Maeda, K 1999, 'Hydrogen enhanced dislocation glides in silicon', Physica Status Solidi (A) Applied Research, vol. 171, no. 1, pp. 27-34.
Yamashita, Yoshifumi ; Jyobe, F. ; Kamiura, Y. ; Maeda, K. / Hydrogen enhanced dislocation glides in silicon. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 171, No. 1. pp. 27-34.
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