Huge residual resistivity in the quantum critical region of CeAgSb2

Miho Nakashima, Shingo Kirita, Rihito Asai, Tatsuo C. Kobayashi, Tomoyuki Okubo, Mineko Yamada, Arumugam Thamizhavel, Yoshihiko Inada, Rikio Settai, Andre Galatanu, Etsuji Yamamoto, Takao Ebihara, Yoshichika Õnuki

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Abstract

We have studied the effect of pressure on the electrical resistivity of a high-quality single crystal CeAgSb2 which has a small net ferromagnetic moment of 0.4 μB/Ce. The magnetic ordering temperature Tord = 9.7 K decreases with increasing pressure p and disappears at a critical pressure pc ≃ 3.3 GPa. The residual resistivity, which is close to zero up to 3 GPa, increases steeply above 3 GPa, reaching 55 μΩ cm at pc. A huge residual resistivity is found to appear when the magnetic order disappears.

Original languageEnglish
Pages (from-to)L111-L117
JournalJournal of Physics Condensed Matter
Volume15
Issue number4
DOIs
Publication statusPublished - Feb 5 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nakashima, M., Kirita, S., Asai, R., Kobayashi, T. C., Okubo, T., Yamada, M., Thamizhavel, A., Inada, Y., Settai, R., Galatanu, A., Yamamoto, E., Ebihara, T., & Õnuki, Y. (2003). Huge residual resistivity in the quantum critical region of CeAgSb2. Journal of Physics Condensed Matter, 15(4), L111-L117. https://doi.org/10.1088/0953-8984/15/4/101