Hot electron injection driven phase transitions

Masaki Hada, Dongfang Zhang, Albert Casandruc, R. J.Dwayne Miller, Yusaku Hontani, Jiro Matsuo, Robert E. Marvel, Richard F. Haglund

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report on a general mechanism for photo-induced phase transitions. The process relies on the photo-injection of hot electrons from an adjacent metallic layer to trigger the structural dynamics of the materials of interest. This mechanism is demonstrated for the semiconductor-to-metal phase transition of VO 2 using a 20 nm Au injection layer. The nature of the phase transition is demonstrated by time-resolved optical transmission measurements, as well as a well defined bias dependence that illustrates that the Au film is the source of nonequilibrium electrons driving the phase transition.

Original languageEnglish
Article number134101
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number13
DOIs
Publication statusPublished - Oct 1 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Hada, M., Zhang, D., Casandruc, A., Miller, R. J. D., Hontani, Y., Matsuo, J., Marvel, R. E., & Haglund, R. F. (2012). Hot electron injection driven phase transitions. Physical Review B - Condensed Matter and Materials Physics, 86(13), [134101]. https://doi.org/10.1103/PhysRevB.86.134101