Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH

Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16 H33 SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16 H33 SH at the interfaces between the Au electrodes and pentacene thin films.

Original languageEnglish
Article number123518
JournalApplied Physics Letters
Volume91
Issue number12
DOIs
Publication statusPublished - Sep 28 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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