Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH

Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

    Research output: Contribution to journalArticlepeer-review

    28 Citations (Scopus)

    Abstract

    Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16 H33 SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16 H33 SH at the interfaces between the Au electrodes and pentacene thin films.

    Original languageEnglish
    Article number123518
    JournalApplied Physics Letters
    Volume91
    Issue number12
    DOIs
    Publication statusPublished - 2007

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint

    Dive into the research topics of 'Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C<sub>16</sub>H<sub>33</sub>SH'. Together they form a unique fingerprint.

    Cite this