Hole-doping and magnetic-field effects on the pseudogap in Bi 1.74Pb0.38Sr1.88CuO6+δ studied by the out-of-plane resistivity

Kazutaka Kudo, Y. Miyoshi, T. Sasaki, N. Kobayashi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Two kinds of pseudogap temperatures T* and T** are deduced from the out-of-plane resistivity of Bi1.74Pb 0.38Sr1.88CuO6+δ in magnetic fields up to 27 T. The pseudogap formed at T* is independent of the magnetic field, while another pseudogap at T** is suppressed by the application of magnetic fields. Taking into account that hole-concentration and magnetic-field dependences of T** resemble those of the superconducting transition temperature Tc, the pseudogap temperature correlating to the superconducting gap is not T* but T**.

Original languageEnglish
Pages (from-to)251-256
Number of pages6
JournalPhysica C: Superconductivity and its Applications
Volume426-431
Issue numberI
DOIs
Publication statusPublished - Oct 1 2005
Externally publishedYes

Fingerprint

Magnetic field effects
Doping (additives)
Magnetic fields
electrical resistivity
magnetic fields
Hole concentration
Superconducting transition temperature
transition temperature
Temperature
temperature

Keywords

  • Bi-based cuprates
  • Bi2201
  • Out-of-plane resistivity
  • Pseudogap

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hole-doping and magnetic-field effects on the pseudogap in Bi 1.74Pb0.38Sr1.88CuO6+δ studied by the out-of-plane resistivity. / Kudo, Kazutaka; Miyoshi, Y.; Sasaki, T.; Kobayashi, N.

In: Physica C: Superconductivity and its Applications, Vol. 426-431, No. I, 01.10.2005, p. 251-256.

Research output: Contribution to journalArticle

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