Hole doping and chemical pressure effects on the strong coupling superconductor PdTe

Li Chen, Ando Ide, Harald O. Jeschke, Kaya Kobayashi

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Chemical doping of known superconductors is a probate strategy to test and enhance our understanding of which parameters control the critical temperature Tc and the critical magnetic fields. The transition metal chalcogenide PdTe is considered a conventional type II superconductor but its resilience to magnetic Fe doping is noteworthy. Isoelectronic Ni doping has been performed, but the effects of doping charges into PdTe have been so far unexplored. We follow two strategies to introduce holes into PdTe and to exert chemical pressure on it: by pnictogen doping on the chalcogen site PdTe1-xSbx and by systematically introducing a Pd deficiency in Pd1-yTe. We find that the superconducting Tc is very sensitive to both kinds of doping. We employ density functional theory to rationalize the observations. We conclude that in PdTe, the effects of charge doping take the lead but we can also identify a structural parameter that correlates with Tc.

    Original languageEnglish
    Pages (from-to)13331-13337
    Number of pages7
    JournalPhysical Chemistry Chemical Physics
    Volume23
    Issue number23
    DOIs
    Publication statusPublished - Jun 21 2021

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physical and Theoretical Chemistry

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